Intel corporation (20240332394). FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING MULTI-LAYER MOLYBDENUM METAL GATE STACK simplified abstract

FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING MULTI-LAYER MOLYBDENUM METAL GATE STACK

Organization Name

intel corporation

Inventor(s)

David N. Goldstein of Beaverton OR (US)

David J. Towner of Portland OR (US)

Dax M. Crum of Beaverton OR (US)

Omair Saadat of Beaverton OR (US)

Dan S. Lavric of Beaverton OR (US)

Orb Acton of Portland OR (US)

Tongtawee Wacharasindhu of Hillsboro OR (US)

Anand S. Murthy of Portland OR (US)

Tahir Ghani of Portland OR (US)

FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING MULTI-LAYER MOLYBDENUM METAL GATE STACK - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240332394 titled 'FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING MULTI-LAYER MOLYBDENUM METAL GATE STACK

The abstract describes gate-all-around integrated circuit structures with a multi-layer molybdenum metal gate stack.

• First vertical arrangement of horizontal nanowires
• Second vertical arrangement of horizontal nanowires
• PMOS gate stack with multi-layer molybdenum structure on first gate dielectric
• NMOS gate stack with multi-layer molybdenum structure or n-type conductive layer on second gate dielectric

Potential Applications: - Advanced semiconductor technology - High-performance integrated circuits - Next-generation electronic devices

Problems Solved: - Enhancing performance and efficiency of integrated circuits - Improving conductivity and gate dielectric properties

Benefits: - Increased speed and reliability of electronic devices - Reduced power consumption and heat generation

Commercial Applications: - Semiconductor industry for manufacturing high-performance chips - Electronics sector for developing cutting-edge devices

Questions about Gate-All-Around Integrated Circuit Structures: 1. How does the multi-layer molybdenum metal gate stack improve the performance of integrated circuits? 2. What are the key differences between the PMOS and NMOS gate stacks in this technology?

Frequently Updated Research: - Ongoing studies on optimizing the design and materials used in gate-all-around integrated circuit structures.

Original Abstract Submitted

gate-all-around integrated circuit structures having a multi-layer molybdenum metal gate stack are described. for example, an integrated circuit structure includes a first vertical arrangement of horizontal nanowires, and a second vertical arrangement of horizontal nanowires. a pmos gate stack is over the first vertical arrangement of horizontal nanowires, the pmos gate stack having a multi-layer molybdenum structure on a first gate dielectric. an nmos gate stack is over the second vertical arrangement of horizontal nanowires, the nmos gate stack having the multi-layer molybdenum structure or an n-type conductive layer on a second gate dielectric.