Intel corporation (20240332392). INTEGRATED CIRCUIT STRUCTURES INCLUDING A TITANIUM SILICIDE MATERIAL simplified abstract

INTEGRATED CIRCUIT STRUCTURES INCLUDING A TITANIUM SILICIDE MATERIAL

Organization Name

intel corporation

Inventor(s)

Dan S. Lavric of Beaverton OR (US)

Glenn A. Glass of Portland OR (US)

Thomas T. Troeger of Portland OR (US)

Suresh Vishwanath of Portland OR (US)

Jitendra Kumar Jha of Hillsboro OR (US)

John F. Richards of Portland OR (US)

Anand S. Murthy of Portland OR (US)

Srijit Mukherjee of Portland OR (US)

INTEGRATED CIRCUIT STRUCTURES INCLUDING A TITANIUM SILICIDE MATERIAL - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240332392 titled 'INTEGRATED CIRCUIT STRUCTURES INCLUDING A TITANIUM SILICIDE MATERIAL

The abstract describes approaches for fabricating an integrated circuit structure with a titanium silicide material, including a semiconductor fin, a gate electrode, and titanium silicide in direct contact with semiconductor source or drain structures.

• Integrated circuit structure includes a semiconductor fin, gate electrode, and titanium silicide material.
• Titanium silicide is in direct contact with semiconductor source or drain structures.
• Titanium silicide conforms to non-flat topography and has a stoichiometric composition of 95% or greater TiSi.
• The structure provides hermetic sealing and enhances performance of the integrated circuit.

Potential Applications: - Semiconductor manufacturing - Electronics industry - Nanotechnology research

Problems Solved: - Improving performance and reliability of integrated circuits - Enhancing conductivity and contact resistance in semiconductor devices

Benefits: - Increased efficiency and speed of electronic devices - Improved durability and longevity of integrated circuits - Enhanced overall performance of semiconductor components

Commercial Applications: - Production of high-performance computer chips - Development of advanced electronic devices - Manufacturing of cutting-edge semiconductor products

Questions about the technology: 1. How does the titanium silicide material improve the performance of the integrated circuit structure? 2. What are the specific advantages of using titanium silicide in semiconductor manufacturing processes?

Frequently Updated Research: - Ongoing studies on optimizing the composition and properties of titanium silicide in semiconductor devices.

Original Abstract Submitted

approaches for fabricating an integrated circuit structure including a titanium silicide material, and the resulting structures, are described. in an example, an integrated circuit structure includes a semiconductor fin above a substrate, a gate electrode over the top and adjacent to the sidewalls of a portion of the semiconductor fin. a titanium silicide material is in direct contact with each of first and second epitaxial semiconductor source or drain structures at first and second sides of the gate electrode. the titanium silicide material is conformal with and hermetically sealing a non-flat topography of each of the first and second epitaxial semiconductor source or drain structures. the titanium silicide material has a total atomic composition including 95% or greater stoichiometric tisi.