Intel corporation (20240332379). BACKSIDE CONTACT ETCH BEFORE CAVITY SPACER FORMATION FOR BACKSIDE CONTACT OF TRANSISTOR SOURCE/DRAIN simplified abstract

BACKSIDE CONTACT ETCH BEFORE CAVITY SPACER FORMATION FOR BACKSIDE CONTACT OF TRANSISTOR SOURCE/DRAIN

Organization Name

intel corporation

Inventor(s)

Shaun Mills of Hillsboro OR (US)

Ehren Mannebach of Beaverton OR (US)

Mauro Kobrinsky of Portland OR (US)

Kai Loon Cheong of Beaverton OR (US)

Makram Abd El Qader of Hillsboro OR (US)

BACKSIDE CONTACT ETCH BEFORE CAVITY SPACER FORMATION FOR BACKSIDE CONTACT OF TRANSISTOR SOURCE/DRAIN - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240332379 titled 'BACKSIDE CONTACT ETCH BEFORE CAVITY SPACER FORMATION FOR BACKSIDE CONTACT OF TRANSISTOR SOURCE/DRAIN

The patent application describes devices, transistor structures, systems, and techniques related to backside contacts for field effect transistors formed using a backside contact etch prior to cavity spacer formation.

• Semiconductor structures such as nanoribbons extend between a source and a drain in the transistor.
• A spacer material is used between a gate and the source/drain as cavity spacer fill.
• The spacer material is also between a portion of a backside contact and a portion of the source/drain to eliminate a short between the backside contact and the gate.

1. 1. 1. Potential Applications:

This technology could be applied in the semiconductor industry for the development of more efficient and reliable field effect transistors.

1. 1. 1. Problems Solved:

The technology addresses the issue of shorts between backside contacts and gates in field effect transistors, improving overall performance and reliability.

1. 1. 1. Benefits:

- Enhanced performance of field effect transistors - Improved reliability by eliminating shorts between backside contacts and gates

1. 1. 1. Commercial Applications:

This technology could have significant commercial applications in the semiconductor industry, particularly in the development of advanced electronic devices.

1. 1. 1. Prior Art:

Readers interested in exploring prior art related to this technology could start by researching patents and publications in the field of semiconductor device fabrication and transistor structures.

1. 1. 1. Frequently Updated Research:

Stay updated on the latest research in semiconductor device fabrication and transistor technologies to understand the evolving landscape of this field.

1. 1. 1. 1. Questions about Backside Contacts:

1. What are the key advantages of using backside contacts in field effect transistors?

  - Backside contacts in field effect transistors can help improve performance and reduce parasitic effects.

2. How does the spacer material contribute to eliminating shorts between backside contacts and gates?

  - The spacer material acts as a barrier between the backside contacts and gates, preventing electrical shorts.

Original Abstract Submitted

devices, transistor structures, systems, and techniques are described herein related to backside contacts for field effect transistors formed using a backside contact etch prior to cavity spacer formation. a transistor includes semiconductor structures such as nanoribbons extending between a source and a drain. a spacer material is between a gate and the source/drain as cavity spacer fill. the spacer material is also between a portion of a backside contact and a portion of the source/drain, to eliminate a short between the backside contact and the gate.