Intel corporation (20240332377). INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE SOURCE OR DRAIN CONTACT SELECTIVITY simplified abstract

INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE SOURCE OR DRAIN CONTACT SELECTIVITY

Organization Name

intel corporation

Inventor(s)

Shaun Mills of Hillsboro OR (US)

Ehren Mannebach of Tigard OR (US)

Mauro J. Kobrinsky of Portland OR (US)

INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE SOURCE OR DRAIN CONTACT SELECTIVITY - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240332377 titled 'INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE SOURCE OR DRAIN CONTACT SELECTIVITY

Simplified Explanation: The patent application describes integrated circuit structures with backside source or drain contact selectivity, including vertically stacked nanowires or fins with conductive contacts beneath.

• First epitaxial source or drain structure at the end of a first plurality of stacked nanowires or fins
• First conductive source or drain contact beneath the first epitaxial structure
• First hardmask material beneath the first conductive contact
• Second epitaxial source or drain structure at the end of a second plurality of stacked nanowires or fins
• Second conductive source or drain contact beneath the second epitaxial structure
• Second hardmask material beneath the second conductive contact

Key Features and Innovation:

• Integration of backside source or drain contact selectivity in integrated circuit structures
• Use of vertically stacked nanowires or fins for improved performance
• Hardmask materials for protection and precision in contact placement

Potential Applications:

• Semiconductor industry for advanced integrated circuits
• Electronics manufacturing for high-performance devices

Problems Solved:

• Enhanced performance and selectivity in integrated circuit structures
• Improved contact placement and protection for source or drain structures

Benefits:

• Increased efficiency and reliability in integrated circuits
• Precision in contact placement for optimized performance

Commercial Applications: Potential commercial applications include the semiconductor industry for advanced integrated circuits, electronics manufacturing for high-performance devices, and research institutions for developing cutting-edge technologies.

Prior Art: Readers can explore prior art related to backside source or drain contact selectivity in integrated circuit structures in semiconductor manufacturing and nanotechnology research.

Frequently Updated Research: Stay informed about the latest advancements in integrated circuit structures, nanowire technology, and semiconductor manufacturing processes for ongoing developments in this field.

Questions about Integrated Circuit Structures with Backside Source or Drain Contact Selectivity: 1. How does the use of vertically stacked nanowires or fins improve the performance of integrated circuit structures? 2. What are the potential applications of backside source or drain contact selectivity in the semiconductor industry?

Original Abstract Submitted

integrated circuit structures having backside source or drain contact selectivity are described. in an example, an integrated circuit structure includes a first epitaxial source or drain structure at an end of a first plurality of horizontally stacked nanowires or fin, with a first conductive source or drain contact vertically beneath and in contact with a bottom of the first epitaxial source or drain structure, and with a first hardmask material beneath and in contact with the first conductive source or drain contact. a second epitaxial source or drain structure is at an end of a second plurality of horizontally stacked nanowires or fin, with a second conductive source or drain contact vertically beneath and in contact with a bottom of the second epitaxial source or drain structure, and a second hardmask material beneath and in contact with the second conductive source or drain contact.