Intel corporation (20240332353). METHODS OF FORMING DIE STRUCTURES WITH SCALLOPED SIDEWALLS AND STRUCTURES FORMED THEREBY simplified abstract
Contents
METHODS OF FORMING DIE STRUCTURES WITH SCALLOPED SIDEWALLS AND STRUCTURES FORMED THEREBY
Organization Name
Inventor(s)
Xavier F. Brun of Hillsboro OR (US)
Rajesh Surapaneni of Portland OR (US)
Brad S. Hamlin of Portland OR (US)
METHODS OF FORMING DIE STRUCTURES WITH SCALLOPED SIDEWALLS AND STRUCTURES FORMED THEREBY - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240332353 titled 'METHODS OF FORMING DIE STRUCTURES WITH SCALLOPED SIDEWALLS AND STRUCTURES FORMED THEREBY
The abstract of this patent application describes microelectronic integrated circuit package structures that involve a die with a dielectric die edge sidewall and a bulk silicon die edge sidewall, which are aligned. The bulk silicon die edge sidewall features scallop structures along its vertical distance.
- The patent application focuses on microelectronic integrated circuit package structures.
- It involves a die with a dielectric die edge sidewall and a bulk silicon die edge sidewall that are aligned.
- The bulk silicon die edge sidewall has scallop structures along its vertical distance.
Potential Applications:
- This technology can be applied in the manufacturing of microelectronic integrated circuit packages.
- It can enhance the structural integrity and performance of integrated circuits.
Problems Solved:
- Provides improved alignment and structural support for integrated circuit packages.
- Enhances the overall reliability and functionality of microelectronic devices.
Benefits:
- Increased durability and stability of integrated circuit packages.
- Improved performance and efficiency of microelectronic devices.
Commercial Applications:
- This technology has potential commercial uses in the semiconductor industry for the production of advanced integrated circuit packages.
- It can impact the market by offering more reliable and high-performance microelectronic devices.
Questions about the technology: 1. How does the alignment of the dielectric die edge sidewall and bulk silicon die edge sidewall benefit the overall structure of the integrated circuit package? 2. What are the specific advantages of the scallop structures along the vertical distance of the bulk silicon die edge sidewall in microelectronic devices?
Original Abstract Submitted
microelectronic integrated circuit package structures include a die having a dielectric die edge sidewall and a bulk silicon die edge sidewall, where the bulk silicon die edge sidewall is in substantial alignment with the dielectric die edge sidewall. the bulk silicon die edge sidewall has a plurality of scallop structures along a vertical distance of the bulk silicon die edge sidewall.
