Intel corporation (20240332302). INTEGRATED CIRCUIT STRUCTURES WITH BACKSIDE CONDUCTIVE SOURCE OR DRAIN CONTACT HAVING ENHANCED CONTACT AREA simplified abstract
INTEGRATED CIRCUIT STRUCTURES WITH BACKSIDE CONDUCTIVE SOURCE OR DRAIN CONTACT HAVING ENHANCED CONTACT AREA
Organization Name
Inventor(s)
Joseph D’silva of Hillsboro OR (US)
Mauro J. Kobrinsky of Portland OR (US)
Debaleena Nandi of Hillsboro OR (US)
Ehren Mannebach of Tigard OR (US)
Shaun Mills of Hillsboro OR (US)
INTEGRATED CIRCUIT STRUCTURES WITH BACKSIDE CONDUCTIVE SOURCE OR DRAIN CONTACT HAVING ENHANCED CONTACT AREA - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240332302 titled 'INTEGRATED CIRCUIT STRUCTURES WITH BACKSIDE CONDUCTIVE SOURCE OR DRAIN CONTACT HAVING ENHANCED CONTACT AREA
The abstract describes integrated circuit structures with backside conductive source or drain contacts that have enhanced contact area, along with methods of fabricating such structures.
- Integrated circuit structure includes a sub-fin structure over a vertical stack of horizontal nanowires or a fin.
- Epitaxial source or drain structure is laterally adjacent to and coupled to the vertical stack of horizontal nanowires or the fin.
- Epitaxial source or drain structure has a recess within a laterally surrounding outer portion.
- Conductive source or drain contact is laterally adjacent to the sub-fin structure and is over and in contact with the epitaxial source or drain structure.
- Conductive source or drain contact is within the recess in the epitaxial source or drain structure.
Potential Applications: - Semiconductor industry for advanced integrated circuits - Electronics manufacturing for improved performance - Research and development for cutting-edge technology advancements
Problems Solved: - Enhanced contact area for improved conductivity - Efficient integration of source or drain contacts in integrated circuits - Enhanced performance and reliability of integrated circuit structures
Benefits: - Increased efficiency and performance of integrated circuits - Enhanced conductivity for better signal transmission - Improved reliability and longevity of integrated circuit structures
Commercial Applications: Title: Advanced Integrated Circuit Structures with Enhanced Contact Area This technology can be applied in the semiconductor industry for manufacturing high-performance integrated circuits, leading to improved electronic devices and systems. The market implications include increased demand for advanced semiconductor technologies and enhanced consumer electronics products.
Questions about Integrated Circuit Structures with Enhanced Contact Area: 1. How does the enhanced contact area benefit the performance of integrated circuits? The enhanced contact area allows for better conductivity and improved signal transmission within the integrated circuits, leading to enhanced performance and efficiency.
2. What are the key features of the epitaxial source or drain structure in this technology? The epitaxial source or drain structure is laterally adjacent to the vertical stack of horizontal nanowires or the fin, with a recess within a laterally surrounding outer portion to accommodate the conductive source or drain contact.
Original Abstract Submitted
integrated circuit structures having backside conductive source or drain contacts having enhanced contact area, and methods of fabricating integrated circuit structures having backside conductive source or drain contacts having enhanced contact area, are described. for example, an integrated circuit structure includes a sub-fin structure over a vertical stack of horizontal nanowires or a fin. an epitaxial source or drain structure is laterally adjacent to and coupled to the vertical stack of horizontal nanowires or the fin. the epitaxial source or drain structure has a recess within a laterally surrounding outer portion. a conductive source or drain contact is laterally adjacent to the sub-fin structure and is over and in contact with the epitaxial source or drain structure. the conductive source or drain contact is within the recess in the epitaxial source or drain structure.
