Intel corporation (20240332299). INTEGRATED CIRCUIT DEVICE WITH HETEROGENOUS TRANSISTORS simplified abstract
Contents
INTEGRATED CIRCUIT DEVICE WITH HETEROGENOUS TRANSISTORS
Organization Name
Inventor(s)
Abhishek Anil Sharma of Portland OR (US)
Sudipto Naskar of Portland OR (US)
Sukru Yemenicioglu of Portland OR (US)
INTEGRATED CIRCUIT DEVICE WITH HETEROGENOUS TRANSISTORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240332299 titled 'INTEGRATED CIRCUIT DEVICE WITH HETEROGENOUS TRANSISTORS
Simplified Explanation: The patent application describes an integrated circuit device with multiple field effect transistors (FETs) on a substrate, where some FETs have channels made of different materials.
- The integrated circuit device includes a variety of FETs with different channel materials.
- Some FETs have channels made of the substrate material, while others have channels made of thin film transistor (TFT) materials.
- This design allows for different performance characteristics and functionalities within the same device.
Key Features and Innovation:
- Integration of FETs with different channel materials on a single substrate.
- Utilization of substrate material and TFT materials for channel construction.
- Enhanced performance and functionality through material diversity.
Potential Applications:
- Consumer electronics
- Communication devices
- Automotive technology
- Industrial automation
- Medical devices
Problems Solved:
- Improved device performance and efficiency.
- Enhanced functionality and versatility.
- Increased design flexibility.
Benefits:
- Higher performance capabilities.
- Greater design flexibility.
- Enhanced functionality.
- Improved efficiency.
Commercial Applications: Potential commercial applications include:
- Mobile devices
- Computer hardware
- IoT devices
- Automotive electronics
- Industrial control systems
Prior Art: Readers can explore prior art related to integrated circuit devices, field effect transistors, and thin film transistor materials in the field of semiconductor technology.
Frequently Updated Research: Stay informed about the latest advancements in integrated circuit technology, semiconductor materials, and field effect transistor design for ongoing developments in this field.
Questions about Integrated Circuit Devices with Different Channel Materials: 1. What are the primary advantages of using different channel materials in integrated circuit devices? 2. How does the integration of substrate and TFT materials impact the overall performance of the device?
Original Abstract Submitted
an integrated circuit device comprising a plurality of first field effect transistors (fets) formed on a substrate, wherein a first fet comprises a first channel material comprising a portion of the substrate; and a plurality of second fets formed on the substrate, wherein a second fet comprises a second channel material that is different from the first channel material, wherein the second channel material comprises a thin film transistor (tft) channel material.
