Intel corporation (20240332285). CIRCUIT COMPONENTS WITH HIGH PERFORMANCE THIN FILM TRANSISTOR MATERIAL simplified abstract

CIRCUIT COMPONENTS WITH HIGH PERFORMANCE THIN FILM TRANSISTOR MATERIAL

Organization Name

intel corporation

Inventor(s)

Sukru Yemenicioglu of Portland OR (US)

Abhishek Anil Sharma of Portland OR (US)

Sudipto Naskar of Portland OR (US)

Kalyan C. Kolluru of Portland OR (US)

Chu-Hsin Liang of Santa Cruz CA (US)

Bashir Uddin Mahmud of Portland OR (US)

Van Le of Beaverton OR (US)

CIRCUIT COMPONENTS WITH HIGH PERFORMANCE THIN FILM TRANSISTOR MATERIAL - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240332285 titled 'CIRCUIT COMPONENTS WITH HIGH PERFORMANCE THIN FILM TRANSISTOR MATERIAL

The abstract describes an integrated circuit device with a resistor formed on a non-crystalline substrate, including a gate electrode, gate dielectric, source electrode, drain electrode, and a thin film transistor (TFT) channel material between the source and drain electrodes.

• The integrated circuit device features a resistor on a non-crystalline substrate.
• The resistor includes a gate electrode and gate dielectric.
• It also includes a source electrode and a drain electrode.
• A thin film transistor (TFT) channel material connects the source and drain electrodes.

Potential Applications: - This technology could be used in various electronic devices such as sensors, displays, and memory storage. - It may find applications in the automotive industry for control systems and power management.

Problems Solved: - Provides a compact and efficient way to integrate resistors into electronic circuits. - Offers improved performance and reliability compared to traditional resistor designs.

Benefits: - Enhanced functionality and performance of electronic devices. - Cost-effective manufacturing process for integrated circuits.

Commercial Applications: Title: Innovative Integrated Circuit Device for Enhanced Electronic Performance This technology could be utilized in the production of consumer electronics, industrial equipment, and automotive components, leading to improved functionality and efficiency in various applications.

Questions about the technology: 1. How does the use of a non-crystalline substrate benefit the performance of the integrated circuit device? 2. What are the potential cost savings associated with implementing this technology in electronic devices?

Original Abstract Submitted

an integrated circuit device comprising a resistor formed on a non-crystalline substrate, the resistor comprising a gate electrode; a gate dielectric in contact with the gate electrode; a source electrode and a drain electrode; and a thin film transistor tft channel material coupled between the source electrode and the drain electrode.