Intel corporation (20240332175). BACKSIDE TRANSISTOR CONTACT SURROUNDED BY OXIDE simplified abstract

BACKSIDE TRANSISTOR CONTACT SURROUNDED BY OXIDE

Organization Name

intel corporation

Inventor(s)

Joseph D’silva of Hillsboro OR (US)

Ehren Mannebach of Tigard OR (US)

Mauro J. Kobrinsky of Portland OR (US)

BACKSIDE TRANSISTOR CONTACT SURROUNDED BY OXIDE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240332175 titled 'BACKSIDE TRANSISTOR CONTACT SURROUNDED BY OXIDE

The abstract of this patent application describes a method for forming backside contacts on a transistor structure by creating trenches through the structure into a silicon wafer during front-side processing, and then forming an oxide structure in the silicon wafer around the trenches to isolate the backside gate contact from the source/drain trenches.

• Formation of backside contacts on a transistor structure by creating trenches through the structure into a silicon wafer during front-side processing.
• Use of a catalytic oxidant material to form an oxide structure in the silicon wafer around the trenches to isolate the backside gate contact from the source/drain trenches.
• The catalytic oxidant material is subsequently removed after forming the oxide structure.
• This technique allows for efficient and effective formation of backside contacts on transistor structures.
• The process helps in improving the overall performance and reliability of the transistor structure.

Potential Applications: - Semiconductor manufacturing - Electronics industry - Integrated circuit fabrication

Problems Solved: - Improved isolation of backside gate contacts from source/drain trenches - Enhanced performance and reliability of transistor structures

Benefits: - Efficient formation of backside contacts - Enhanced performance and reliability of transistor structures - Cost-effective manufacturing process

Commercial Applications: Title: Advanced Backside Contact Formation Technique for Transistor Structures This technology can be utilized in the semiconductor industry for manufacturing advanced transistor structures with improved performance and reliability. It can also find applications in the electronics industry for integrated circuit fabrication, leading to more efficient and cost-effective production processes.

Questions about Backside Contact Formation Technique: 1. How does the use of a catalytic oxidant material contribute to the formation of backside contacts on transistor structures? 2. What are the potential benefits of isolating the backside gate contact from the source/drain trenches in transistor structures?

Original Abstract Submitted

embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for forming backside contacts on a transistor structure by forming, during front-side processing, trenches through the transistor structure into a silicon wafer, and then, using a catalytic oxidant material that is subsequently removed, forming an oxide structure in the silicon wafer around the trenches to isolate the backside gate contact from the source/drain trenches. other embodiments may be described and/or claimed.