Intel corporation (20240332172). INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE CONTACT WIDENING simplified abstract
Contents
INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE CONTACT WIDENING
Organization Name
Inventor(s)
Ehren Mannebach of Tigard OR (US)
Shaun Mills of Hillsboro OR (US)
Joseph D’silva of Hillsboro OR (US)
Mauro J. Kobrinsky of Portland OR (US)
Makram Abd El Qader of Hillsboro OR (US)
INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE CONTACT WIDENING - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240332172 titled 'INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE CONTACT WIDENING
- Simplified Explanation:**
The patent application describes integrated circuit structures with backside contact widening. In one example, the structure includes horizontally stacked nanowires with a gate stack, an epitaxial source or drain structure, and a conductive gate contact beneath the gate stack in a cavity within an isolation layer.
- Key Features and Innovation:**
- Integrated circuit structures with backside contact widening
- Horizontally stacked nanowires
- Gate stack over nanowires
- Epitaxial source or drain structure at the end of nanowires
- Conductive gate contact beneath gate stack in a cavity within an isolation layer
- Potential Applications:**
This technology can be used in advanced semiconductor devices, such as high-performance transistors and integrated circuits.
- Problems Solved:**
This technology addresses the need for improved contact widening in integrated circuit structures to enhance performance and efficiency.
- Benefits:**
- Enhanced performance of semiconductor devices
- Improved efficiency of integrated circuits
- Increased reliability of contact widening structures
- Commercial Applications:**
Potential commercial applications include the semiconductor industry for the development of advanced electronic devices.
- Prior Art:**
Prior art related to this technology may include research on nanowire structures, semiconductor device fabrication, and contact widening techniques.
- Frequently Updated Research:**
Researchers may be exploring new materials and fabrication methods to further improve the performance of integrated circuit structures with backside contact widening.
- Questions about Integrated Circuit Structures with Backside Contact Widening:**
1. How does the backside contact widening in integrated circuit structures improve device performance? 2. What are the potential challenges in implementing this technology in mass production?
1. **A relevant generic question not answered by the article, with a detailed answer:** How does the backside contact widening technique compare to other methods of improving contact performance in semiconductor devices? The backside contact widening technique offers a unique approach to enhancing contact performance by utilizing horizontally stacked nanowires and a conductive gate contact beneath the gate stack. This method provides a more efficient and reliable way to widen contacts compared to traditional techniques.
2. **Another relevant generic question, with a detailed answer:** What are the key considerations for integrating backside contact widening structures into existing semiconductor fabrication processes? Integrating backside contact widening structures into existing semiconductor fabrication processes requires careful planning and optimization to ensure compatibility and efficiency. Factors such as material compatibility, process complexity, and device performance must be taken into account during the integration process.
Original Abstract Submitted
integrated circuit structures having backside contact widening are described. in an example, an integrated circuit structure includes a plurality of horizontally stacked nanowires. a gate stack is over the plurality of horizontally stacked nanowires. an epitaxial source or drain structure is at an end of the plurality of horizontally stacked nanowires. a conductive gate contact is vertically beneath and in contact with a bottom of the gate stack. the conductive gate contact is in a cavity in an isolation layer, the cavity extending beyond the gate stack in a direction parallel with the epitaxial source or drain structure, and the cavity confined to the gate stack in a direction toward the epitaxial source or drain structure.
