Intel corporation (20240332126). THERMAL GROUNDING IN BACKSIDE POWER SCHEMES USING CARRIER WAFERS simplified abstract

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THERMAL GROUNDING IN BACKSIDE POWER SCHEMES USING CARRIER WAFERS

Organization Name

intel corporation

Inventor(s)

Andy Wei of Yamhill OR (US)

Po-Yao Ke of Kaohsiung City (TW)

Kai-Chiang Wu of Hsinchu City (TW)

Han-wen Lin of Zhubei City (TW)

Klaus Max Schruefer of Baldham (DE)

Dean Huang of Hsinchu City (TW)

Hsin-Hua Wang of San Jose CA (US)

THERMAL GROUNDING IN BACKSIDE POWER SCHEMES USING CARRIER WAFERS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240332126 titled 'THERMAL GROUNDING IN BACKSIDE POWER SCHEMES USING CARRIER WAFERS

Simplified Explanation: The patent application discusses the thermal dissipation and grounding of integrated circuit (IC) devices with backside power delivery networks. It involves a layer of IC device between frontside and backside interconnect sections, connected to a crystalline heat spreader or a metal thermal ground layer through an array of thermal pillars.

  • The IC device layer is composed mostly of an insulating material.
  • The layer is coupled to a crystalline heat spreader or a metal thermal ground layer by an array of thermal pillars.
  • The crystalline heat spreader layer may include thermal sensors, such as thermal sensing diodes, also coupled to the IC device layer by thermal pillars.
  • The IC device layer and crystalline layers are coupled by a hybrid bond, forming the thermal pillars through a continuous section of the insulating material.

Key Features and Innovation:

  • Integration of thermal dissipation and grounding in IC devices.
  • Use of thermal pillars to connect IC device layer to heat spreader or thermal ground layer.
  • Inclusion of thermal sensors in the crystalline heat spreader layer for temperature monitoring.
  • Hybrid bond formation for coupling IC device layer and crystalline layers.

Potential Applications:

  • Electronics industry for improved thermal management in IC devices.
  • Consumer electronics for enhanced performance and reliability.
  • Automotive industry for efficient thermal dissipation in electronic components.

Problems Solved:

  • Addressing thermal issues in integrated circuit devices.
  • Ensuring proper grounding for IC devices.
  • Enhancing overall performance and longevity of electronic components.

Benefits:

  • Improved thermal dissipation capabilities.
  • Enhanced reliability and performance of IC devices.
  • Efficient grounding for better electrical connectivity.

Commercial Applications: Potential commercial applications include:

  • Semiconductor manufacturing companies.
  • Electronics manufacturers.
  • Automotive electronics suppliers.

Prior Art: Prior art related to this technology may include patents or research papers on thermal management in integrated circuits, grounding techniques in electronic devices, and hybrid bonding methods for semiconductor devices.

Frequently Updated Research: Stay updated on the latest advancements in thermal dissipation technologies, hybrid bonding techniques, and semiconductor manufacturing processes relevant to this innovation.

Questions about Thermal Dissipation and Grounding of IC Devices with Backside Power Delivery Networks: 1. How does the use of thermal pillars improve the thermal dissipation of IC devices? 2. What are the potential challenges in implementing hybrid bonding for coupling IC device layers with crystalline heat spreaders?


Original Abstract Submitted

thermal dissipation and grounding of integrated circuit (ic) devices with backside power delivery networks are discussed. an ic device layer between frontside and backside interconnect sections, composed mostly of an insulating material, is coupled to a crystalline heat spreader or a metal thermal ground layer by an array of thermal pillars extending through the insulating material. the crystalline heat spreader layer may include one or more thermal sensors, such as thermal sensing diodes, also coupled to the ic device layer by one or more thermal pillars. the ic device layer and crystalline layers are coupled by a hybrid bond, which forms the thermal pillars through a continuous section of the insulating material.