Intel corporation (20240332088). MODULATION OF CHIP PERFORMANCE BY CONTROLLING TRANSISTOR GATE PROFILE simplified abstract

MODULATION OF CHIP PERFORMANCE BY CONTROLLING TRANSISTOR GATE PROFILE

Organization Name

intel corporation

Inventor(s)

Reza Bayati of Portland OR (US)

Swapnadip Ghosh of Hillsboro OR (US)

Chiao-Ti Huang of Portland OR (US)

Matthew Prince of Portland OR (US)

Jeffrey Miles Tan of Hillsboro OR (US)

Ramy Ghostine of Portland OR (US)

Anupama Bowonder of Portland OR (US)

MODULATION OF CHIP PERFORMANCE BY CONTROLLING TRANSISTOR GATE PROFILE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240332088 titled 'MODULATION OF CHIP PERFORMANCE BY CONTROLLING TRANSISTOR GATE PROFILE

The abstract of the patent application describes a technology where transistors have gate structures with differing sidewall slopes, which can correspond to different electrical characteristics. These gate structures are located over stacks of channel regions in nanosheets, nanoribbons, or nanowires. Transistors with metal gate structures can be tuned by etching the gate structures strategically to achieve substantially vertical gate profiles.

• Gate structures in transistors have differing sidewall slopes.
• Gate structures are located over stacks of channel regions in nanosheets, nanoribbons, or nanowires.
• Differing gate profiles correspond to different electrical characteristics.
• Metal gate structures in transistors can be tuned by strategic etching.
• Strategic etching involves lower etch powers, higher etch temperatures, and/or longer etch durations to achieve vertical gate profiles.

Potential Applications: - Semiconductor industry for advanced transistor technology - Electronics manufacturing for improved performance - Nanotechnology for enhancing device capabilities

Problems Solved: - Enhancing the performance of transistors - Improving the efficiency of electronic devices - Advancing nanotechnology applications

Benefits: - Increased functionality of transistors - Enhanced electrical characteristics - Improved overall performance of electronic devices

Commercial Applications: Title: Advanced Transistor Technology for Enhanced Performance This technology can be utilized in the semiconductor industry to develop more efficient and high-performance electronic devices, leading to potential market advantages and technological advancements.

Questions about the technology: 1. How does the strategic etching of gate structures impact the performance of transistors? 2. What are the potential applications of this technology in the field of nanotechnology?

Original Abstract Submitted

one or more transistors may have gate structures with differing sidewall slopes. the gate structures may be over stacks of channel regions in nanosheets (or nanoribbons or nanowires), and the differing gate profiles may correspond to differing electrical characteristics. transistors with metal gate structures may be tuned by strategically etching the gate structures, for example, using lower etch powers, higher etch temperatures, and/or longer etch durations, to achieve substantially vertical gate profiles.