Intel corporation (20240332077). INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE GATE CONNECTION simplified abstract
Contents
INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE GATE CONNECTION
Organization Name
Inventor(s)
Shaun Mills of Hillsboro OR (US)
Ehren Mannebach of Tigard OR (US)
Mauro J. Kobrinsky of Portland OR (US)
INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE GATE CONNECTION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240332077 titled 'INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE GATE CONNECTION
Simplified Explanation: The patent application describes integrated circuit structures with backside gate connections. These structures include horizontally stacked nanowires or fins, a gate stack, and an epitaxial source or drain structure. A conductive gate-to-contact connection is located beneath the epitaxial source or drain structure, providing electrical contact with the gate stack.
- Integrated circuit structures with backside gate connections
- Horizontally stacked nanowires or fins
- Gate stack and epitaxial source or drain structure
- Conductive gate-to-contact connection beneath the epitaxial source or drain structure
- Electrical contact with the gate stack
Potential Applications: 1. Advanced semiconductor devices 2. High-performance computing systems 3. Nanotechnology research and development
Problems Solved: 1. Enhancing the performance of integrated circuits 2. Improving the efficiency of semiconductor devices 3. Facilitating the development of nanoscale technologies
Benefits: 1. Increased speed and efficiency of electronic devices 2. Enhanced functionality of integrated circuits 3. Potential for miniaturization and improved energy efficiency
Commercial Applications: Title: Advanced Semiconductor Devices with Backside Gate Connections This technology could be utilized in the development of next-generation processors, memory chips, and other advanced electronic devices. The market implications include improved performance, increased functionality, and potential cost savings for semiconductor manufacturers.
Prior Art: Researchers can explore prior art related to nanowire transistors, finFET structures, and backside gate connections in semiconductor devices to understand the evolution of this technology.
Frequently Updated Research: Ongoing research in the field of nanotechnology, semiconductor materials, and device physics may provide new insights into the optimization and application of integrated circuit structures with backside gate connections.
Questions about Integrated Circuit Structures with Backside Gate Connections: 1. How do backside gate connections improve the performance of integrated circuits? 2. What are the potential challenges associated with implementing horizontally stacked nanowires in semiconductor devices?
Original Abstract Submitted
integrated circuit structures having backside gate connection are described. in an example, an integrated circuit structure includes a plurality of horizontally stacked nanowires or a fin. a gate stack is over the plurality of horizontally stacked nanowires or the fin. an epitaxial source or drain structure is at an end of the plurality of horizontally stacked nanowires or the fin. a conductive gate-to-contact connection is vertically beneath the epitaxial source or drain structure and vertically beneath and in electrical contact with the gate stack.
