Intel corporation (20240332071). PLASMA ENHANCED ATOMIC LAYER DEPOSITION OF DIELECTRIC MATERIAL UPON OXIDIZABLE MATERIAL simplified abstract
Contents
PLASMA ENHANCED ATOMIC LAYER DEPOSITION OF DIELECTRIC MATERIAL UPON OXIDIZABLE MATERIAL
Organization Name
Inventor(s)
Alireza Narimannezhad of Hillsboro OR (US)
Vladislav Kamysbayev of Hillsboro OR (US)
Xiaoye Qin of Portland OR (US)
Sunzida Ferdous of Portland OR (US)
Reken Patel of Portland OR (US)
PLASMA ENHANCED ATOMIC LAYER DEPOSITION OF DIELECTRIC MATERIAL UPON OXIDIZABLE MATERIAL - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240332071 titled 'PLASMA ENHANCED ATOMIC LAYER DEPOSITION OF DIELECTRIC MATERIAL UPON OXIDIZABLE MATERIAL
Simplified Explanation: A low-leakage oxide dielectric material with high elastic modulus is deposited directly on an oxidizable feature using a polycyclic PE-ALD process to prevent oxide formation.
Key Features and Innovation:
- Deposition of low-leakage oxide dielectric material directly on an oxidizable feature
- Use of a polycyclic PE-ALD process to limit oxide formation
- Deposition of precursor(s) such as silicon on a workpiece during a deposition phase
- Oxidation of absorbed precursor(s) under conservative conditions to achieve a specific film thickness
- Oxidation of absorbed precursor(s) under aggressive conditions to reach the total film thickness
- Preservation of high electrical conductivity in transistor contact metal after being insulated with the low-leakage film
Potential Applications: This technology can be applied in semiconductor manufacturing, specifically in the production of transistors and other electronic devices.
Problems Solved: This technology addresses the challenge of preventing oxide formation on oxidizable features while depositing a low-leakage dielectric material with high elastic modulus.
Benefits:
- Improved performance and reliability of electronic devices
- Enhanced electrical insulation without compromising conductivity
- Increased efficiency in semiconductor manufacturing processes
Commercial Applications: The technology can be utilized in the production of advanced semiconductor devices, leading to improved performance and reliability in various electronic applications.
Prior Art: Further research can be conducted on PE-ALD processes, oxide dielectric materials, and methods for preventing oxide formation in semiconductor manufacturing.
Frequently Updated Research: Stay updated on advancements in PE-ALD processes, dielectric materials, and semiconductor manufacturing techniques to enhance the application of this technology.
Questions about the Technology: 1. What are the specific conditions required for the PE-ALD process to limit oxide formation effectively? 2. How does the high elastic modulus of the dielectric material contribute to the performance of electronic devices?
Original Abstract Submitted
a low-leakage oxide dielectric material with high elastic modulus is deposited directly upon an oxidizable feature with a polycyclic pe-ald process that limits the formation of an oxide on the feature. a precursor of one or more constituents, such as silicon, may be deposited upon a workpiece during a deposition phase, and the absorbed precursor(s) may be oxidized during a first oxidation phase under more conservative conditions until a first film thickness is achieved. subsequently, absorbed precursor(s) may be oxidized during a second oxidation phase under more aggressive conditions to arrive at a total film thickness. transistor contact metal, which may provide local interconnection between source or drain terminals of multiple transistors, may maintain high electrical conductivity after being electrically insulated with such a low-leakage film.
