Intel corporation (20240332064). BACK SIDE INTERCONNECT PATTERNING AND FRONT SIDE METAL INTERCONNECT ON A TRANSISTOR LAYER simplified abstract
Contents
BACK SIDE INTERCONNECT PATTERNING AND FRONT SIDE METAL INTERCONNECT ON A TRANSISTOR LAYER
Organization Name
Inventor(s)
Ehren Mannebach of Tigard OR (US)
Shaun Mills of Hillsboro OR (US)
Joseph D’silva of Hillsboro OR (US)
Mauro J. Kobrinsky of Portland OR (US)
BACK SIDE INTERCONNECT PATTERNING AND FRONT SIDE METAL INTERCONNECT ON A TRANSISTOR LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240332064 titled 'BACK SIDE INTERCONNECT PATTERNING AND FRONT SIDE METAL INTERCONNECT ON A TRANSISTOR LAYER
The patent application relates to the formation of a package with a transistor layer containing front side metal interconnect layers and back side metal contact and interconnect layers.
- Back side metal contact and interconnect layers may be patterned before the transistor layer is formed.
- Front side metal interconnect layers are formed on the transistor layer.
- The process allows for the patterning of metal layers before the formation of the transistor layer.
Potential Applications: - Semiconductor manufacturing - Electronics packaging - Integrated circuit production
Problems Solved: - Efficient formation of transistor layers - Improved metal interconnect layer patterning - Enhanced package reliability
Benefits: - Enhanced performance of electronic devices - Increased efficiency in manufacturing processes - Improved reliability of integrated circuits
Commercial Applications: Title: Advanced Semiconductor Packaging Technology for Enhanced Device Performance This technology can be utilized in the semiconductor industry for the production of high-performance electronic devices, leading to improved market competitiveness and customer satisfaction.
Questions about Semiconductor Packaging Technology: 1. How does the patterning of metal layers before the transistor layer formation improve the manufacturing process? - Patterning metal layers in advance allows for more precise placement of interconnects, enhancing the overall performance and reliability of the package.
2. What are the potential challenges associated with forming front side metal interconnect layers on the transistor layer? - One potential challenge could be ensuring proper alignment and adhesion of the metal layers to the transistor layer, which may require advanced manufacturing techniques and quality control measures.
Original Abstract Submitted
embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for forming a package that has a transistor layer with a front side metal interconnect layer and a back side metal contact and interconnect layer. in particular, back side metal contact and interconnect layers may be patterned before a transistor layer, or other device layer, is formed on the patterned layers and before front side metal interconnect layers are formed on the transistor layer. other embodiments may be described and/or claimed.
