Intel corporation (20240331761). N-P BALANCED MULTI-PORT REGISTER FILE WITH COMPLEMENTARY FIELD-EFFECT TRANSISTORS (CFETS) simplified abstract
Contents
N-P BALANCED MULTI-PORT REGISTER FILE WITH COMPLEMENTARY FIELD-EFFECT TRANSISTORS (CFETS)
Organization Name
Inventor(s)
Charles Augustine of Portland OR (US)
Seenivasan Subramaniam of Hillsboro OR (US)
Patrick Morrow of Portland OR (US)
Muhammad M. Khellah of Tigard OR (US)
Feroze Merchant of Austin TX (US)
N-P BALANCED MULTI-PORT REGISTER FILE WITH COMPLEMENTARY FIELD-EFFECT TRANSISTORS (CFETS) - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240331761 titled 'N-P BALANCED MULTI-PORT REGISTER FILE WITH COMPLEMENTARY FIELD-EFFECT TRANSISTORS (CFETS)
The patent application describes an apparatus with a complex configuration involving multiple transistors and metal layers.
- The apparatus includes a first write bit line (wbl), a first p-channel metal oxide semiconductor (pmos) transistor, and a first inverter.
- The first pmos transistor is connected to the wbl, while the first inverter is linked to the drain of the first pmos transistor.
- A second pmos transistor is also present, with its source connected to the output of the first inverter.
- The first and second pmos transistors are situated in a pmos layer between two metal layers, with a via connecting their gates to the first metal layer.
Potential Applications: - This technology could be used in memory storage systems or integrated circuits where efficient data writing processes are crucial. - It may find applications in high-speed computing devices or advanced electronic devices requiring fast and reliable data transfer.
Problems Solved: - The apparatus addresses the need for improved data writing capabilities in electronic systems. - It offers a solution for enhancing the performance and efficiency of memory storage components.
Benefits: - Faster data writing speeds. - Enhanced reliability in data storage. - Improved overall performance of electronic devices.
Commercial Applications: Title: Advanced Data Writing Technology for Memory Storage Systems This technology could revolutionize the data storage industry by providing faster and more efficient data writing processes for memory storage systems. It has the potential to be widely adopted in various electronic devices, leading to improved performance and reliability in data storage operations.
Questions about the technology: 1. How does this technology compare to existing data writing methods in terms of speed and efficiency? 2. What are the potential cost implications of implementing this technology in memory storage systems?
Original Abstract Submitted
an apparatus includes a first write bit line (wbl), a first p-channel metal oxide semiconductor (pmos) transistor including a source coupled to the wbl, a first inverter including an input coupled to a drain of the first pmos transistor, and a second pmos transistor including a source coupled to an output of the first inverter. the first pmos transistor and the second pmos transistor are disposed in at least one pmos layer configured between a first metal layer and a second metal layer. the register file circuit further includes a first via connecting a gate of the first pmos transistor and a gate of the second pmos transistor in the at least one pmos layer to the first metal layer.
