Intel corporation (20240329122). DEVICE UNDER TEST (DUT) STRUCTURES FOR VOLTAGE CONTRAST (VC) DETECTION OF CONTACT OPENS simplified abstract
Contents
DEVICE UNDER TEST (DUT) STRUCTURES FOR VOLTAGE CONTRAST (VC) DETECTION OF CONTACT OPENS
Organization Name
Inventor(s)
Sairam Subramanian of Portland OR (US)
Amit Paliwal of Hillsboro OR (US)
Dipto Thakurta of Portland OR (US)
DEVICE UNDER TEST (DUT) STRUCTURES FOR VOLTAGE CONTRAST (VC) DETECTION OF CONTACT OPENS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240329122 titled 'DEVICE UNDER TEST (DUT) STRUCTURES FOR VOLTAGE CONTRAST (VC) DETECTION OF CONTACT OPENS
The abstract of the patent application describes a device under test (DUT) structure for voltage contrast (VC) detection of contact opens. The structure includes a fin formed along a first direction over a substrate, with a diffusion region within the fin. A trench contact (TCN) segment is positioned along a second direction orthogonal to the first direction over the fin and in contact with the diffusion region. A floating gate, parallel to the TCN segment over the fin, is not in contact with the TCN segment and does not have a via formed on it.
- The DUT structure includes a fin with a diffusion region, either p-type or n-type.
- A TCN segment is positioned orthogonal to the fin, in contact with the diffusion region.
- A floating gate, parallel to the TCN segment, is not in contact with it and has no via formed on it.
Potential Applications: - Semiconductor testing - Integrated circuit manufacturing
Problems Solved: - Detection of contact opens in semiconductor devices - Improved voltage contrast detection
Benefits: - Enhanced reliability in semiconductor testing - Efficient identification of contact opens
Commercial Applications: Title: Semiconductor Testing Device for Contact Open Detection This technology can be used in semiconductor testing equipment to improve the detection of contact opens in integrated circuits, enhancing the overall quality and reliability of semiconductor devices.
Questions about the technology: 1. How does the DUT structure improve voltage contrast detection?
The DUT structure enhances voltage contrast detection by providing a specific layout that allows for efficient identification of contact opens in semiconductor devices.
2. What are the potential implications of using this technology in semiconductor testing?
By implementing this technology, semiconductor manufacturers can improve the quality control process and ensure the reliability of their integrated circuits.
Original Abstract Submitted
a device under test (dut) structure for voltage contrast (vc) detection of contact opens comprises a fin formed along a first direction over a substrate, the fin having a diffusion region, the fin doped to form i) a p-type fin and a p-type diffusion region or ii) an n-type fin and an n-type diffusion region. a trench contact (tcn) segment is along a second direction generally orthogonal to the first direction over the fin and in contact with the diffusion region. a floating gate is generally parallel to the tcn segment over the fin, wherein the floating gate and the tcn segment are not in contact, and the floating gate does not have a via formed thereon.
