18613509. NANOSTRUCTURE TRANSISTORS WITH SOURCE/DRAIN TRENCH CONTACT LINERS simplified abstract (ATOMERA INCORPORATED)
Contents
NANOSTRUCTURE TRANSISTORS WITH SOURCE/DRAIN TRENCH CONTACT LINERS
Organization Name
Inventor(s)
Donghun Kang of San Jose CA (US)
NANOSTRUCTURE TRANSISTORS WITH SOURCE/DRAIN TRENCH CONTACT LINERS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18613509 titled 'NANOSTRUCTURE TRANSISTORS WITH SOURCE/DRAIN TRENCH CONTACT LINERS
The semiconductor device described in the patent application includes gate stacks on a substrate, with trenches between adjacent gate stacks. Each gate stack consists of alternating layers of first and second semiconductor materials, with the second semiconductor material forming nanostructures. Additionally, there are source/drain regions within the trenches, insulating regions at the lateral ends of the first semiconductor material layers, and conductive contact liners in the trenches.
- Gate stacks with alternating semiconductor materials
- Nanostructures formed by the second semiconductor material
- Source/drain regions within the trenches
- Insulating regions at the lateral ends of the first semiconductor material layers
- Conductive contact liners in the trenches
Potential Applications: - Advanced semiconductor devices - High-performance electronics - Nanotechnology research
Problems Solved: - Enhancing device performance - Increasing efficiency - Improving semiconductor technology
Benefits: - Improved functionality - Enhanced performance - Potential for miniaturization
Commercial Applications: Title: Advanced Semiconductor Devices for High-Performance Electronics This technology could be utilized in the development of cutting-edge electronic devices for various industries, including telecommunications, computing, and consumer electronics. The market implications include the potential for faster and more efficient devices that could revolutionize the electronics market.
Questions about Semiconductor Device Technology: 1. How does the use of nanostructures in the gate stacks impact device performance? 2. What are the potential challenges in scaling this technology for mass production?
Frequently Updated Research: Researchers are continually exploring new ways to optimize semiconductor device structures for improved performance and efficiency. Stay updated on the latest advancements in nanostructure integration and semiconductor materials to understand the evolving landscape of semiconductor technology.
Original Abstract Submitted
A semiconductor device may include a substrate, and spaced apart gate stacks on the substrate with adjacent gate stacks defining a respective trench therebetween, Each gate stack may include alternating layers of first and second semiconductor materials, with the layers of the second semiconductor material defining nanostructures. The semiconductor device may further include respective source/drain regions within the trenches, respective insulating regions adjacent lateral ends of the layers of the first semiconductor material, and respective conductive contact liners in the trenches.
