18669156. RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE LAYER HAVING A SUPERLATTICE simplified abstract (ATOMERA INCORPORATED)
Contents
RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE LAYER HAVING A SUPERLATTICE
Organization Name
Inventor(s)
HIDEKI Takeuchi of SAN JOSE CA (US)
ROBERT J. Mears of WELLESLEY MA (US)
RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE LAYER HAVING A SUPERLATTICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18669156 titled 'RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE LAYER HAVING A SUPERLATTICE
The abstract describes a radio frequency (RF) semiconductor device with a unique structure including a conductive superlattice on a semiconductor-on-insulator substrate.
- The RF ground plane layer on the substrate contains a conductive superlattice made up of stacked groups of layers.
- Each group of layers consists of doped base semiconductor monolayers defining a doped base semiconductor portion, along with at least one non-semiconductor monolayer constrained within the crystal lattice of adjacent doped base semiconductor portions.
- The device also includes a body, source and drain regions, a channel region, and a gate.
Potential Applications: - RF communication devices - Wireless technology - Satellite communication systems
Problems Solved: - Improved RF performance - Enhanced signal transmission - Increased efficiency in RF devices
Benefits: - Higher conductivity - Better signal quality - Increased device reliability
Commercial Applications: Title: "Enhancing RF Performance with Innovative Semiconductor Technology" This technology can be applied in the telecommunications industry for the development of advanced RF devices, leading to improved communication systems and enhanced signal transmission capabilities.
Questions about RF Semiconductor Devices: 1. How does the unique structure of the conductive superlattice contribute to the performance of RF semiconductor devices? 2. What are the potential challenges in integrating this innovative technology into existing RF communication systems?
Frequently Updated Research: Researchers are continuously exploring new materials and structures to further enhance the performance of RF semiconductor devices, aiming to push the boundaries of communication technology.
Original Abstract Submitted
A radio frequency (RF) semiconductor device may include a semiconductor-on-insulator substrate, and an RF ground plane layer on the semiconductor-on-insulator substrate including a conductive superlattice. The conductive superlattice may include stacked groups of layers, with each group of layers comprising stacked doped base semiconductor monolayers defining a doped base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent doped base semiconductor portions. The RF semiconductor device may further include a body above the RF ground plane layer, spaced apart source and drain regions adjacent the body and defining a channel region in the body, and a gate overlying the channel region.
