18182397. METHOD OF MANUFACTURING MICRO DEVICES simplified abstract (MIKRO MESA TECHNOLOGY CO., LTD.)

METHOD OF MANUFACTURING MICRO DEVICES

Organization Name

MIKRO MESA TECHNOLOGY CO., LTD.

Inventor(s)

Li-Yi Chen of Tainan City (TW)

Hsiao-Fu Lu of Tainan City (TW)

METHOD OF MANUFACTURING MICRO DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18182397 titled 'METHOD OF MANUFACTURING MICRO DEVICES

The method of manufacturing micro devices involves preparing a III-nitride epitaxial structure with various layers, including p-type III-nitride, n-type III-nitride, AlIII_othersN, and undoped III-nitride layers.

• The process includes forming a photoresist layer on the III-nitride epitaxial structure, patterning it, and performing plasma etching to create trenches in the structure.
• The trenches extend at least to the AlIII_othersN layer, and a second plasma etching process cuts the structure into multiple micro devices.

Potential Applications: - Microelectronics - Optoelectronics - Sensors

Problems Solved: - Efficient manufacturing of micro devices - Precise etching processes - Enhanced device performance

Benefits: - High precision in device manufacturing - Improved device functionality - Cost-effective production

Commercial Applications: Title: Advanced Micro Device Manufacturing Technology This technology can be used in the production of various micro devices for industries such as consumer electronics, telecommunications, and healthcare, leading to more advanced and efficient products in the market.

Questions about Micro Device Manufacturing: 1. How does this technology improve the performance of micro devices? This technology enhances the precision and efficiency of manufacturing processes, leading to improved device functionality and overall performance.

2. What are the potential challenges in implementing this manufacturing method on a large scale? Scaling up this manufacturing method may require optimization of processes and equipment to ensure consistent quality and cost-effectiveness.

Original Abstract Submitted

A method of manufacturing micro devices includes: preparing a III-nitride epitaxial structure including a p-type III-nitride layer, an n-type III-nitride layer on the p-type III-nitride layer, a AlIII_othersN layer on the n-type III-nitride layer, and an undoped III-nitride layer on the AlIII_othersN layer; forming a photoresist layer on the III-nitride epitaxial structure to contact the undoped III-nitride layer; patterning the photoresist layer; performing a first plasma etching process to the III-nitride epitaxial structure through the patterned photoresist layer to form a trench in the etched III-nitride epitaxial structure, in which the trench extends from the etched photoresist layer at least to the AlIII_othersN layer; and performing a second plasma etching process to the etched III-nitride epitaxial structure until the etched III-nitride epitaxial structure is cut into a plurality of micro devices and a top surface of the etched AlIII_othersN layer is exposed.