18350584. SPIN ORBIT TORQUE BASED THERMAL SENSOR FOR INSITU MONITORING OF MAGNETIC RECORDING HEAD simplified abstract (Western Digital Technologies, Inc.)

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SPIN ORBIT TORQUE BASED THERMAL SENSOR FOR INSITU MONITORING OF MAGNETIC RECORDING HEAD

Organization Name

Western Digital Technologies, Inc.

Inventor(s)

Quang Le of San Jose CA (US)

Xiaoyong Liu of San Jose CA (US)

Brian R. York of San Jose CA (US)

Cherngye Hwang of San Jose CA (US)

Rohan Babu Nagabhirava of Virginia Beach VA (US)

Kuok San Ho of Emerald Hills CA (US)

Hisashi Takano of Fujisawa-shi (JP)

Son T. Le of San Jose CA (US)

Nam Hai Pham of Tokyo (JP)

Huy H. Ho of Tokyo (JP)

SPIN ORBIT TORQUE BASED THERMAL SENSOR FOR INSITU MONITORING OF MAGNETIC RECORDING HEAD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18350584 titled 'SPIN ORBIT TORQUE BASED THERMAL SENSOR FOR INSITU MONITORING OF MAGNETIC RECORDING HEAD

The present disclosure pertains to temperature detection devices with a ferromagnetic material at a media facing surface, generating an electric voltage signal due to an anomalous Nernst effect. Additionally, a spin-orbit torque material is included, such as BiSb or a topological insulator, abutting the ferromagnetic material to receive a spin current parallel to the temperature gradient, detectable as a second electric voltage signal via an inverse spin Hall effect.

  • Ferromagnetic material produces electric voltage signal in response to temperature gradient
  • Spin-orbit torque material abuts ferromagnetic material to receive spin current
  • Spin current generates second electric voltage signal via inverse spin Hall effect
  • First and second electric voltage signals are combined for temperature detection
  • Utilizes anomalous Nernst effect and spin Seebeck effect for temperature sensing

Potential Applications: - Temperature sensing in electronic devices - Thermal management systems - Energy-efficient sensors for temperature monitoring

Problems Solved: - Accurate temperature detection in various applications - Enhanced efficiency in thermal management systems

Benefits: - Precise temperature monitoring - Energy efficiency - Improved performance in electronic devices

Commercial Applications: Title: Advanced Temperature Detection Devices for Electronic Systems This technology can be applied in various industries such as consumer electronics, automotive, aerospace, and industrial automation for accurate temperature monitoring and thermal management.

Questions about Temperature Detection Devices: 1. How does the anomalous Nernst effect contribute to temperature sensing in this device? The anomalous Nernst effect in the ferromagnetic material generates an electric voltage signal in response to a temperature gradient, allowing for precise temperature detection.

2. What role does the spin-orbit torque material play in the temperature detection process? The spin-orbit torque material, such as BiSb or a topological insulator, abuts the ferromagnetic material to receive a spin current parallel to the temperature gradient, which is detectable as a second electric voltage signal via an inverse spin Hall effect.


Original Abstract Submitted

The present disclosure generally relates to temperature detection devices including a ferromagnetic (FM) material disposed at a media facing surface (MFS). The FM material is configured to produce a first electric voltage signal in response to a temperature gradient due to an anomalous Nernst effect. The temperature detection device may also include a spin-orbit torque (SOT) material abutting the FM material. The SOT material includes at least one of BiSb, a topological insulator, a topological half-Heusler alloy, or a weakly oxidized heavy metal. The SOT material is recessed from the MFS, wherein the SOT material is configured to receive a spin current parallel to the temperature gradient generated by a spin Seebeck effect in the FM material. The spin current is detectable as a second electric voltage signal via an inverse spin Hall effect. The first electric voltage signal is added to the second electric voltage signal.