18592646. SUBSTRATE PROCESSING APPARATUS, CLEANING METHOD, SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM simplified abstract (Kokusai Electric Corporation)
SUBSTRATE PROCESSING APPARATUS, CLEANING METHOD, SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM
Organization Name
Inventor(s)
Kaoru Yamamoto of Toyama-shi (JP)
SUBSTRATE PROCESSING APPARATUS, CLEANING METHOD, SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A simplified explanation of the abstract
This abstract first appeared for US patent application 18592646 titled 'SUBSTRATE PROCESSING APPARATUS, CLEANING METHOD, SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM
Simplified Explanation: The patent application describes a technique for effectively performing a cleaning process in a process chamber using a cleaning gas supplier and a controller.
- The technique involves a substrate support with a placing surface for supporting a product substrate or a smaller dummy substrate.
- The controller controls operations for processing the product substrate with process gas and performing a cleaning process on a cleaning target formed by the process gas.
- The cleaning process involves supplying the cleaning gas to the substrate placing surface around the outer circumference of the dummy substrate to clean the area between the back surface of the product substrate and the placing surface.
Key Features and Innovation:
- Utilizes a cleaning gas supplier and controller for efficient cleaning processes.
- Supports both product and dummy substrates on the substrate support.
- Controls cleaning gas supply to clean the area between the product substrate and the support surface effectively.
Potential Applications: This technology can be applied in semiconductor manufacturing, electronics production, and other industries requiring precise cleaning processes.
Problems Solved:
- Ensures thorough cleaning of the substrate support surface.
- Improves the efficiency and effectiveness of the cleaning process in a controlled environment.
Benefits:
- Enhanced cleaning performance for product substrates.
- Increased productivity and reliability in manufacturing processes.
- Reduced contamination risks in sensitive production environments.
Commercial Applications: Potential commercial applications include semiconductor fabrication facilities, clean room environments, and high-tech manufacturing plants.
Prior Art: Readers can explore prior art related to cleaning processes in semiconductor manufacturing, substrate support technologies, and gas supply systems in controlled environments.
Frequently Updated Research: Stay informed about advancements in cleaning gas technologies, substrate support designs, and process chamber innovations relevant to this technique.
Questions about Cleaning Gas Technology: 1. How does the technique ensure the thorough cleaning of the substrate support surface? 2. What are the potential applications of this technology beyond semiconductor manufacturing?
Original Abstract Submitted
There is provided a technique capable of effectively performing a cleaning process. There is provided a technique that includes: a process chamber; a process gas supplier; a cleaning gas supplier; a substrate support including a substrate placing surface for supporting a product substrate or a dummy substrate whose diameter is smaller than that of the product substrate; and a controller capable of control operations for processing the product substrate by supplying the process gas; and performing a cleaning process on a cleaning target formed by the process gas entering between a back surface of the product substrate and the substrate placing surface, wherein the cleaning process is performed by supplying the cleaning gas to at least a portion of the substrate placing surface corresponding to an outer circumference of the dummy substrate in a state where the dummy substrate is supported on the substrate placing surface.
