18444778. SEMICONDUCTOR STRUCTURE simplified abstract (E Ink Holdings Inc.)
Contents
SEMICONDUCTOR STRUCTURE
Organization Name
Inventor(s)
Ming-Kai Chuang of Hsinchu (TW)
Huai-Cheng Lin of Hsinchu (TW)
Ming-Sheng Chiang of Hsinchu (TW)
Lih-Hsiung Chan of Hsinchu (TW)
SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18444778 titled 'SEMICONDUCTOR STRUCTURE
Simplified Explanation: The semiconductor structure in the patent application includes a gate, an active layer, a gate insulator layer, a source, and a drain. The active layer consists of a source region, a drain region, and a channel region. The structure meets specific conditions related to the materials and thicknesses used in different regions.
Key Features and Innovation:
- The active layer may contain a-Si material, with varying thicknesses in different regions.
- The gate insulator layer comprises multiple layers with different materials to enhance performance.
Potential Applications: This technology could be applied in the development of advanced semiconductor devices for various electronic applications.
Problems Solved: The patent addresses the need for improved semiconductor structures with optimized materials and thicknesses for enhanced performance.
Benefits:
- Enhanced efficiency and performance in semiconductor devices.
- Potential for increased functionality and reliability in electronic applications.
Commercial Applications: The technology could be utilized in the production of high-performance electronic devices, potentially impacting industries such as consumer electronics and telecommunications.
Prior Art: Readers can explore prior research on semiconductor structures, gate insulator layers, and materials used in semiconductor devices to understand the background of this innovation.
Frequently Updated Research: Stay updated on advancements in semiconductor technology, materials science, and device fabrication techniques to further enhance the performance of semiconductor structures.
Questions about Semiconductor Structures: 1. What are the key considerations in designing semiconductor structures for optimal performance? 2. How do different materials in the gate insulator layer impact the overall functionality of semiconductor devices?
Original Abstract Submitted
A semiconductor structure includes a gate, an active layer, a gate insulator layer, a source, and a drain. The active layer has a source region, a drain region, and a channel region. The semiconductor structure satisfies at least one of the following conditions: (1) a material of the active layer includes a-Si, and a first thickness and a second thickness of the active layer respectively in the source region and the drain region are respectively greater than a third thickness of the active layer in the channel region; (2) the gate insulator layer includes a first gate insulator layer, a third gate insulator layer, and a second gate insulator layer located between the first and third gate insulator layers. A material of the first gate insulator layer is identical to a material of the third gate insulator layer but different from a material of the second gate insulator layer.
