18601541. Method For Forming Resist Underlayer Film And Patterning Process simplified abstract (SHIN-ETSU CHEMICAL CO., LTD.)
Contents
Method For Forming Resist Underlayer Film And Patterning Process
Organization Name
Inventor(s)
Naoki Kobayashi of Joestsu-shi (JP)
Nobuhiro Nagamachi of Joetsu-shi (JP)
Kenta Ishiwata of Joetsu-shi (JP)
Daisuke Kori of Joestsu-shi (JP)
Method For Forming Resist Underlayer Film And Patterning Process - A simplified explanation of the abstract
This abstract first appeared for US patent application 18601541 titled 'Method For Forming Resist Underlayer Film And Patterning Process
The present invention is a method for forming a resist underlayer film, involving coating a substrate with a composition containing a metal compound and heating the coated substrate in an oxygen-deficient atmosphere.
- Method for forming a resist underlayer film with high filling property and dry etching resistance
- Uses a metal compound with crosslinking groups for improved properties
- Heating step in an oxygen-deficient atmosphere at specific temperatures
- Suitable for patterning processes in semiconductor manufacturing
- Enhances the performance of resist materials in lithography processes
Potential Applications: - Semiconductor manufacturing - Photolithography processes - Microelectronics industry
Problems Solved: - Improving filling property and dry etching resistance of resist underlayer films - Enhancing the performance of resist materials in semiconductor processes
Benefits: - Increased efficiency in semiconductor manufacturing - Improved quality of patterning processes - Enhanced durability of resist underlayer films
Commercial Applications: "Method for Forming a Resist Underlayer Film with Enhanced Properties in Semiconductor Manufacturing"
Frequently Updated Research: - Ongoing research on advanced materials for resist underlayer films in semiconductor industry
Questions about the technology: 1. How does the method improve the performance of resist underlayer films in semiconductor manufacturing? 2. What are the specific benefits of using a metal compound with crosslinking groups in the composition?
Original Abstract Submitted
The present invention is a method for forming a resist underlayer film, including: a coating step of coating a substrate with a composition for forming a resist underlayer film containing a metal compound having a metal-oxygen covalent bond and an organic solvent; and a heating step of heating the coated substrate in an atmosphere having an oxygen concentration of less than 1 volume % at a temperature of 450° C. or higher and 800° C. or lower, where a compound containing at least one crosslinking group represented by the following general formulae (a-1) to (a-4), (b-1) to (b-4), and (c-1) to (c-3) is used as the metal compound. This provides: a method for forming a resist underlayer film that contains metal and that exhibits both high filling property and high dry etching resistance; and a patterning process using the method.
