18590834. RESIST COMPOSITION AND PATTERN FORMING PROCESS simplified abstract (SHIN-ETSU CHEMICAL CO., LTD.)
Contents
RESIST COMPOSITION AND PATTERN FORMING PROCESS
Organization Name
Inventor(s)
Jun Hatakeyama of Joetsu-shi (JP)
RESIST COMPOSITION AND PATTERN FORMING PROCESS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18590834 titled 'RESIST COMPOSITION AND PATTERN FORMING PROCESS
The present invention is about a resist composition and a pattern forming process that includes a quencher to improve the Line Width Roughness (LWR) of line patterns and the Dimensional Uniformity (CDU) of hole patterns, as well as enhance sensitivity.
- The resist composition shows higher sensitivity, improved LWR, and CDU regardless of whether it is positive or negative tone.
- The resist composition contains a quencher with a disulfonium salt having a specific formula.
Potential Applications: This technology can be applied in the semiconductor industry for lithography processes to create precise patterns on substrates.
Problems Solved: This technology addresses the challenges of achieving high sensitivity, improved LWR, and CDU in resist compositions for pattern forming processes.
Benefits: The benefits of this technology include enhanced sensitivity, improved LWR, and CDU, leading to higher quality and more precise patterns in semiconductor manufacturing.
Commercial Applications: This technology can be commercially used in semiconductor fabrication facilities to improve the quality and precision of pattern formation processes, ultimately leading to better semiconductor devices.
Prior Art: Researchers interested in this technology can explore prior art related to resist compositions, quenchers, and pattern forming processes in the semiconductor industry.
Frequently Updated Research: Stay updated on the latest advancements in resist compositions, quenchers, and lithography processes in the semiconductor industry to enhance the understanding and application of this technology.
Questions about Resist Composition and Pattern Forming Process: 1. What are the key factors that contribute to the sensitivity and uniformity improvements in the resist composition? 2. How does the quencher with a disulfonium salt formula enhance the LWR and CDU in pattern forming processes?
Original Abstract Submitted
The present invention relates to a resist composition and a pattern forming process. The quencher is capable of improving the LWR of line patterns or the dimensional uniformity (CDU) of hole patterns and enhancing sensitivity. The resist composition exhibits higher sensitivity and improved LWR and CDU regardless of whether it is of positive or negative tone, and a pattern forming process using the resist composition. The resist composition comprises a quencher containing a disulfonium salt having formula (1).
