18436721. ONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS simplified abstract (SHIN-ETSU CHEMICAL CO., LTD.)
Contents
ONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS
Organization Name
Inventor(s)
Masahiro Fukushima of Joetsu-shi (JP)
ONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18436721 titled 'ONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS
The abstract describes a patent application for an onium salt-based chemically amplified resist composition that can be used in DUV or EUV lithography to create resist patterns with improved resolution, reduced LWR, and collapse resistance.
- The resist composition includes an onium salt with a nitrogen-containing aliphatic heterocycle and an aromatic carboxylic acid structure as a quencher.
- When processed by deep-UV or EUV lithography, the resist composition shows high resolution, reduced LWR, and prevents resist pattern collapse.
Potential Applications: - Semiconductor manufacturing - Photolithography processes - Advanced microelectronics fabrication
Problems Solved: - Improved resolution in resist patterns - Reduced line width roughness (LWR) - Enhanced resistance to pattern collapse
Benefits: - Higher quality and more precise semiconductor devices - Increased efficiency in microelectronics fabrication processes - Enhanced performance of photolithography techniques
Commercial Applications: Title: Advanced Resist Composition for Semiconductor Manufacturing This technology can be utilized in the production of cutting-edge semiconductor devices, improving their performance and reliability. It has the potential to revolutionize the field of microelectronics fabrication by enabling the creation of smaller, more intricate components with enhanced precision.
Questions about the technology: 1. How does the onium salt-based resist composition improve resolution in lithography processes? 2. What specific advantages does the inclusion of a nitrogen-containing aliphatic heterocycle and an aromatic carboxylic acid structure provide in the resist composition?
Original Abstract Submitted
An onium salt is provided. The chemically amplified resist composition can be processed by DUV or EUV lithography to form a resist pattern with improved resolution, reduced LWR, and collapse resistance. A resist composition comprising an onium salt having a nitrogen-containing aliphatic heterocycle and an aromatic carboxylic acid structure as a quencher is provided. When processed by deep-UV or EUV lithography, the resist composition exhibits a high resolution and reduced LWR and prevents the resist pattern from collapsing.
