18270080. SEMICONDUCTOR SUBSTRATE, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE PRODUCTION DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE simplified abstract (KYOCERA CORPORATION)
SEMICONDUCTOR SUBSTRATE, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE PRODUCTION DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE
Organization Name
Inventor(s)
Takeshi Kamikawa of Kyoto-shi (JP)
Katsuaki Masaki of Kyoto-shi (JP)
Yuichiro Hayashi of Kyoto-shi (JP)
Toshihiro Kobayashi of Kyoto-shi (JP)
SEMICONDUCTOR SUBSTRATE, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE PRODUCTION DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18270080 titled 'SEMICONDUCTOR SUBSTRATE, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE PRODUCTION DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE
The semiconductor substrate in this patent application consists of a base substrate, a mask layer with an opening portion and a mask portion, and a GaN-based semiconductor layer containing a GaN-based semiconductor. The GaN-based semiconductor layer is divided into a first portion on the mask portion and a second portion on the opening portion with a lower dislocation density of non-threading dislocations.
- GaN-based semiconductor layer with distinct portions based on mask layer design
- Lower dislocation density in the second portion compared to the first portion
- Enhanced quality and performance of the GaN-based semiconductor layer
- Improved efficiency and reliability of semiconductor devices
- Potential for advanced semiconductor applications in various industries
Potential Applications: - High-performance electronic devices - Power electronics - Optoelectronic devices - Wireless communication systems
Problems Solved: - Addressing dislocation density issues in GaN-based semiconductor layers - Improving the overall quality and performance of semiconductor devices
Benefits: - Enhanced efficiency and reliability of semiconductor devices - Improved functionality and performance in various applications - Potential for advancements in semiconductor technology
Commercial Applications: Title: Advanced Semiconductor Technology for High-Performance Devices This technology could be utilized in the development of high-performance electronic devices, power electronics, optoelectronic devices, and wireless communication systems. The improved quality and performance of the GaN-based semiconductor layer could lead to more reliable and efficient semiconductor devices, opening up opportunities for innovation in various industries.
Questions about GaN-based Semiconductor Substrate: 1. How does the design of the mask layer impact the dislocation density in the GaN-based semiconductor layer? The design of the mask layer influences the distribution of dislocations in the GaN-based semiconductor layer, with the second portion having a lower density due to its location on the opening portion.
2. What are the potential implications of lower dislocation density in the GaN-based semiconductor layer for semiconductor device performance? Lower dislocation density can lead to improved efficiency, reliability, and overall performance of semiconductor devices, making them more suitable for advanced applications.
Original Abstract Submitted
A semiconductor substrate includes a base substrate, a mask layer including an opening portion and a mask portion, and a GaN-based semiconductor layer that includes a GaN-based semiconductor. The GaN-based semiconductor layer includes: a first portion located on the mask portion; and a second portion that is located on the opening portion and has a lower dislocation density of non-threading dislocations in a cross section of the GaN-based semiconductor layer taken along a thickness direction than the first portion.
