18676451. IMAGE SENSOR simplified abstract (UNITED MICROELECTRONICS CORP.)
Contents
IMAGE SENSOR
Organization Name
Inventor(s)
Cheng-Yu Hsieh of Singapore (SG)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18676451 titled 'IMAGE SENSOR
The patent application describes an image sensor with a semiconductor substrate, isolation structures, visible light detection structures, and infrared light detection structures.
- The semiconductor substrate has two surfaces, with isolation structures defining pixel regions.
- Visible light and infrared light detection structures are within the same pixel region.
- A portion of the visible light structure is between the substrate surface and the infrared light structure.
- The infrared light structure includes an epitaxial structure, while the visible light structure includes a doped region with the same material as the substrate.
- Key Features and Innovation:**
- Integration of visible light and infrared light detection structures within the same pixel region.
- Use of isolation structures to define pixel regions in the semiconductor substrate.
- Placement of the visible light structure between the substrate surface and the infrared light structure.
- Potential Applications:**
- Surveillance cameras
- Medical imaging devices
- Automotive sensors
- Problems Solved:**
- Efficient detection of both visible and infrared light in a single sensor.
- Simplified manufacturing process with integrated structures.
- Benefits:**
- Enhanced image quality with dual light detection capabilities.
- Cost-effective production with streamlined design.
- Commercial Applications:**
Potential commercial applications include the development of advanced imaging systems for various industries such as security, healthcare, and automotive.
- Questions about Image Sensor Technology:**
1. How does the integration of visible and infrared light detection structures benefit image sensor performance? 2. What are the potential challenges in manufacturing image sensors with dual light detection capabilities?
Original Abstract Submitted
An image sensor includes a semiconductor substrate, a first isolation structure, a visible light detection structure, and an infrared light detection structure. The semiconductor substrate has a first surface and a second surface opposite to the first surface in a vertical direction. The first isolation structure is disposed in the semiconductor substrate for defining pixel regions in the semiconductor substrate. The visible light detection structure and the infrared light detection structure are disposed within the same pixel region, and a first portion of the visible light detection structure is disposed between the second surface of the semiconductor substrate and the infrared light detection structure in the vertical direction. The infrared light detection structure includes an epitaxial structure disposed in the semiconductor substrate, and the visible light detection structure includes a doped region including a material identical to a material of the semiconductor substrate.
