18674953. SEMICONDUCTOR STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)

SEMICONDUCTOR STRUCTURE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor(s)

TE-MING Kung of TAICHUNG CITY (TW)

YING-LANG Wang of TAI-CHUNG CITY (TW)

KEI-WEI Chen of TAINAN CITY (TW)

WEN-HSI Lee of KAOHSIUNG CITY (TW)

SHU WEI Chang of KAOHSIUNG CITY (TW)

SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18674953 titled 'SEMICONDUCTOR STRUCTURE

The semiconductor structure described in the patent application consists of a substrate, a nanowire positioned on the substrate, a metal gate electrode layer, and a gate dielectric layer.

• The nanowire is composed of a first portion and a second portion, with the first portion containing a first semiconductor layer and a second semiconductor layer surrounded by the first semiconductor layer.
• The metal gate electrode layer encircles the first portion of the nanowire, while the gate dielectric layer is situated between the metal gate electrode layer and the nanowire.

Key Features and Innovation:

• Integration of a nanowire with distinct semiconductor layers for enhanced performance.
• Use of a metal gate electrode layer for improved control over the nanowire's behavior.
• Incorporation of a gate dielectric layer to optimize the interaction between the nanowire and the metal gate electrode.

Potential Applications:

• Advanced semiconductor devices for electronics industry.
• High-performance transistors for computing applications.
• Nanoscale sensors for various industries.

Problems Solved:

• Enhanced control and efficiency in semiconductor devices.
• Improved performance and reliability of transistors.
• Miniaturization of electronic components for compact devices.

Benefits:

• Increased speed and efficiency in electronic devices.
• Enhanced functionality and performance of transistors.
• Potential for smaller and more powerful electronic gadgets.

Commercial Applications:

• Semiconductor manufacturing companies for developing cutting-edge devices.
• Electronics industry for creating high-performance products.
• Research institutions for further exploration and development of nanowire technology.

Questions about the technology: 1. How does the integration of distinct semiconductor layers in the nanowire contribute to its performance? 2. What advantages does the use of a metal gate electrode layer bring to the semiconductor structure?

Original Abstract Submitted

A semiconductor structure includes a substrate, a nanowire disposed over the substrate, a metal gate electrode layer and a gate dielectric layer. A dielectric layer is formed on the substrate. The nanowire has a first portion and a second portion. The nanowire has a first portion and a second portion, the first portion of the nanowire comprises a first semiconductor layer and a second semiconductor layer surrounded by the first semiconductor layer, the second portion comprises the second semiconductor layer. The metal gate electrode layer surrounds the first portion of the nanowire. The gate dielectric layer is disposed between the metal gate electrode layer and the nanowire.