18676077. SCHOTTKY BARRIER DIODE simplified abstract (TDK Corporation)
Contents
SCHOTTKY BARRIER DIODE
Organization Name
Inventor(s)
Katsumi Kawasaki of Tokyo (JP)
SCHOTTKY BARRIER DIODE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18676077 titled 'SCHOTTKY BARRIER DIODE
The patent application describes a Schottky barrier diode with a semiconductor substrate made of gallium oxide, a drift layer also made of gallium oxide, an anode electrode in Schottky contact with the drift layer, and a cathode electrode in ohmic contact with the semiconductor substrate. The drift layer features a center trench filled with the anode electrode, with an insulating film covering the bottom surface of the trench. A portion of the side surface of the trench is in Schottky contact with the anode electrode.
- Semiconductor substrate made of gallium oxide
- Drift layer made of gallium oxide
- Anode electrode in Schottky contact with drift layer
- Cathode electrode in ohmic contact with semiconductor substrate
- Center trench in drift layer filled with anode electrode
- Insulating film covering bottom surface of center trench
- Side surface of center trench in Schottky contact with anode electrode
Potential Applications: - Power electronics - Solar cells - LED lighting - High-frequency applications
Problems Solved: - Improved efficiency in power conversion - Enhanced performance in high-frequency applications - Better heat dissipation
Benefits: - Higher efficiency - Improved reliability - Enhanced performance in various applications
Commercial Applications: Title: Gallium Oxide Schottky Barrier Diode: Commercial Uses and Market Implications This technology can be utilized in power electronics, solar energy systems, LED lighting, and high-frequency communication devices. The market for these applications is growing rapidly, presenting significant opportunities for companies involved in the semiconductor industry.
Questions about Gallium Oxide Schottky Barrier Diode:
1. How does the use of gallium oxide in the semiconductor substrate benefit the performance of the diode?
- Gallium oxide offers high breakdown voltage and thermal stability, making it ideal for high-power applications.
2. What advantages does the Schottky barrier design provide in terms of efficiency and performance?
- The Schottky barrier reduces the forward voltage drop and improves switching speed, leading to higher efficiency and better overall performance.
Original Abstract Submitted
Disclosed herein is a Schottky barrier diode that includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and provided on the semiconductor substrate, an anode electrode brought into Schottky contact with the drift layer, and a cathode electrode brought into ohmic contact with the semiconductor substrate. The drift layer has a center trench filled with the anode electrode. A bottom surface of the center trench is covered with an insulating film without being in contact with the anode electrode. At least a part of a side surface of the center trench is brought into Schottky contact with the anode electrode.
