18610288. SEMICONDUCTOR DEVICE simplified abstract (ROHM CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Shimpei Ohnishi of Kyoto-shi (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18610288 titled 'SEMICONDUCTOR DEVICE
The present disclosure introduces a semiconductor device featuring a vertical transistor and a semiconductor layer forming part of the vertical transistor. The semiconductor layer consists of a first doped layer, a second doped layer on top of the first doped layer, and a third doped layer on the second doped layer. The impurity concentration of the first conductivity type in the first doped layer is higher than that in the third doped layer, while the impurity concentration of the first conductivity type in the second doped layer is lower than that in the third doped layer.
- Vertical transistor included in the semiconductor device
- Semiconductor layer forming part of the vertical transistor
- Semiconductor layer composed of first, second, and third doped layers
- Impurity concentration of first conductivity type varies among the doped layers
Potential Applications: - Power electronics - Integrated circuits - Semiconductor manufacturing
Problems Solved: - Enhanced performance of vertical transistors - Improved efficiency in semiconductor devices
Benefits: - Higher conductivity - Better control of impurity concentrations - Increased overall device performance
Commercial Applications: Title: "Advanced Semiconductor Devices for Enhanced Performance" This technology can be utilized in various industries such as telecommunications, automotive, and consumer electronics. It has the potential to revolutionize the semiconductor market by offering more efficient and reliable devices.
Questions about the technology: 1. How does the impurity concentration affect the performance of the vertical transistor? 2. What are the specific advantages of using multiple doped layers in the semiconductor device design?
Frequently Updated Research: Researchers are constantly exploring new ways to optimize impurity concentrations in semiconductor devices to improve their efficiency and performance. Stay updated on the latest advancements in this field to leverage the full potential of this technology.
Original Abstract Submitted
The present disclosure provides a semiconductor device. The semiconductor device includes: a vertical transistor; and a semiconductor layer, forming a portion of the vertical transistor. The semiconductor layer includes: a first doped layer; a second doped layer, formed on the first doped layer; and a third doped layer, formed on the second doped layer. An impurity concentration of a first conductivity type of the first doped layer is greater than an impurity concentration of the first conductivity type of the third doped layer, and an impurity concentration of the first conductivity type of the second doped layer is less than the impurity concentration of the first conductivity type of the third doped layer.
