18408318. IMAGE SENSING DEVICE simplified abstract (SK hynix Inc.)
Contents
IMAGE SENSING DEVICE
Organization Name
Inventor(s)
Sung Wook Cho of Icheon-si (KR)
IMAGE SENSING DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18408318 titled 'IMAGE SENSING DEVICE
Simplified Explanation: The patent application describes an image sensing device with multiple photoelectric conversion elements in each pixel, isolated from elements in neighboring pixels. It includes anti-reflection layers, a light guide, and a grid layer to enhance image quality.
Key Features and Innovation:
- Multiple photoelectric conversion elements in each pixel
- Isolation structure to separate elements in different pixels
- Anti-reflection layers to reduce glare and improve image quality
- Light guide to direct light to the photoelectric conversion elements
- Grid layer for structural support and organization
Potential Applications: This technology can be used in digital cameras, smartphones, security cameras, and other imaging devices where high-quality images are essential.
Problems Solved: The device addresses issues of glare, image distortion, and pixel crosstalk, resulting in clearer and more accurate images.
Benefits:
- Improved image quality
- Reduced glare and distortion
- Enhanced pixel isolation for better color accuracy
- Higher resolution and sharper images
Commercial Applications: The technology can be applied in consumer electronics, surveillance systems, medical imaging devices, and scientific instruments to enhance image capture and analysis capabilities.
Questions about Image Sensing Devices: 1. How does the isolation structure in the device improve image quality? 2. What are the potential drawbacks of using multiple photoelectric conversion elements in each pixel?
Original Abstract Submitted
An image sensing device includes: a plurality of photoelectric conversion elements included in a unit pixel and located in a substrate layer; an isolation structure configured to isolate the plurality of photoelectric conversion elements from photoelectric conversion elements included in another unit pixel; a first anti-reflection layer configured to overlap the plurality of photoelectric conversion elements and disposed to be in contact with one surface of the substrate layer; a light guide disposed between the plurality of photoelectric conversion elements and disposed to be in contact with one surface of the substrate layer and the first anti-reflection layer; a grid layer configured to overlap the isolation structure; and a second anti-reflection layer disposed to be in contact with the first anti-reflection layer, the light guide, and the grid layer, wherein the light guide includes a material having a refractive index smaller than a refractive index of the first anti-reflection layer.
