18456071. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)

SEMICONDUCTOR DEVICE

Organization Name

TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Inventor(s)

Katsuhisa Tanaka of Himeji Hyogo (JP)

Hiroshi Kono of Himeji Hyogo (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18456071 titled 'SEMICONDUCTOR DEVICE

The abstract describes a patent application for a silicon carbide layer with specific surface and thickness characteristics, including an inter-layer insulating film and a field plate.

• The silicon carbide layer has a first surface, a second surface recessed further towards a third surface, and a side surface.
• An inter-layer insulating film with a greater thickness than the difference in heights between the first and second surfaces is located on the second surface.
• A field plate with lower resistivity than the inter-layer insulating film is positioned within the inter-layer insulating film.

Potential Applications: - Power electronics - Semiconductor devices - High-temperature applications

Problems Solved: - Improved insulation and field control in semiconductor devices - Enhanced performance in high-temperature environments

Benefits: - Increased efficiency and reliability of power electronics - Better thermal management in high-power applications

Commercial Applications: Silicon carbide layers with advanced field plate technology can be used in various industries such as automotive, aerospace, and renewable energy for high-performance electronic devices.

Questions about Silicon Carbide Layer with Field Plate Technology: 1. How does the field plate technology improve the performance of semiconductor devices? 2. What are the key advantages of using silicon carbide layers in high-temperature applications?

Frequently Updated Research: Ongoing research focuses on optimizing the design and materials used in silicon carbide layers to further enhance their performance and reliability.

Original Abstract Submitted

A silicon carbide layer includes a first surface, a second surface, a third surface positioned at a side opposite to the first and second surfaces in a first direction, and a side surface. The second surface is at a position recessed further toward the third surface side than the first surface. An inter-layer insulating film is located on the second surface. A thickness of the inter-layer insulating film is greater than a difference in heights in the first direction between the first surface and the second surface. A field plate is located in the inter-layer insulating film. The field plate has a lower resistivity than the inter-layer insulating film.