18443253. RC-IGBT simplified abstract (Mitsubishi Electric Corporation)
Contents
RC-IGBT
Organization Name
Mitsubishi Electric Corporation
Inventor(s)
RC-IGBT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18443253 titled 'RC-IGBT
The abstract describes an RC-IGBT (Reverse Conducting Insulated Gate Bipolar Transistor) with a semiconductor substrate containing different regions such as the IGBT region, diode region, wiring region, and termination region.
- The semiconductor substrate includes a diffusion layer of a second conductivity type on the first main surface side of a drift layer in the IGBT region.
- The diffusion layer consists of a base layer in the IGBT region, an anode layer in the diode region, a wiring well layer in the wiring region, and a termination well layer in the termination region.
- The depth of the base layer is shallower than the depths of the trench gates but deeper than the depths of the anode layer, wiring well layer, and termination well layer.
Potential Applications: - Power electronics - Renewable energy systems - Electric vehicles
Problems Solved: - Improved efficiency in power conversion - Enhanced performance in high-power applications - Better thermal management
Benefits: - Higher power density - Lower energy losses - Increased reliability and durability
Commercial Applications: Title: "Revolutionizing Power Electronics: The Impact of RC-IGBT Technology" This technology can be used in various industries such as renewable energy, electric vehicles, and industrial automation, leading to more efficient and reliable power systems.
Questions about RC-IGBT: 1. How does the diffusion layer in the semiconductor substrate contribute to the performance of the RC-IGBT?
- The diffusion layer plays a crucial role in controlling the conductivity and efficiency of the device by providing specific electrical properties in different regions.
2. What are the key advantages of using an RC-IGBT compared to traditional power semiconductor devices?
- The RC-IGBT offers higher power density, lower energy losses, and improved thermal management, making it ideal for high-power applications.
Original Abstract Submitted
An RC-IGBT includes a semiconductor substrate having a cell region, a wiring region, and a termination region. The semiconductor substrate includes a diffusion layer of a second conductivity type provided on a first main surface side of a drift layer in an IGBT region, a diode region, the wiring region, and the termination region. The diffusion layer includes a base layer in the IGBT region, an anode layer in the diode region, a wiring well layer in the wiring region, and a termination well layer in the termination region. A depth of the base layer is less than depths of a plurality of trench gates, and is equal to or more than depths of the anode layer, the wiring well layer, and the termination well layer.
