18599458. MAGNETIC MEMORY DEVICE simplified abstract (SK hynix Inc.)
Contents
MAGNETIC MEMORY DEVICE
Organization Name
Inventor(s)
Hyung-Woo Ahn of Seongnam-si Gyeonggi-do (KR)
Ku Youl Jung of Icheon-si (KR)
MAGNETIC MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18599458 titled 'MAGNETIC MEMORY DEVICE
The magnetic memory device described in the patent application consists of a memory cell with a switching element, a magnetoresistance effect element, and an electrode that connects the two elements. The electrode is made up of a first non-magnetic layer in contact with the switching element, and a second non-magnetic layer with an amorphous structure and containing a metal oxide or metal nitride on the opposite side.
- The memory cell in the magnetic memory device includes a unique electrode structure with two non-magnetic layers.
- The second non-magnetic layer of the electrode has an amorphous structure and contains a metal oxide or metal nitride.
- The electrode design enhances the performance and efficiency of the memory cell in the device.
- The use of specific materials in the electrode contributes to the overall functionality of the magnetic memory device.
- This innovation aims to improve the reliability and storage capacity of magnetic memory devices.
Potential Applications: - Data storage devices - Computer memory systems - Magnetic sensors
Problems Solved: - Enhancing memory cell performance - Improving data storage efficiency - Increasing reliability of magnetic memory devices
Benefits: - Higher storage capacity - Improved data retention - Enhanced device reliability
Commercial Applications: Title: Advanced Magnetic Memory Devices for Enhanced Data Storage This technology can be utilized in various commercial applications such as: - Consumer electronics - Data centers - Information technology systems
Questions about Magnetic Memory Devices: 1. How does the electrode structure in the memory cell impact the overall performance of the magnetic memory device? The electrode structure plays a crucial role in connecting the switching and magnetoresistance effect elements, thereby affecting the efficiency and reliability of the device.
2. What are the key advantages of using a metal oxide or metal nitride in the second non-magnetic layer of the electrode? The metal oxide or metal nitride in the second non-magnetic layer enhances the properties of the electrode, contributing to the improved functionality of the memory cell in the magnetic memory device.
Original Abstract Submitted
According to one embodiment, a magnetic memory device includes a memory cell. The memory cell includes a switching element, a magnetoresistance effect element, and an electrode that electrically couples the switching element to the magnetoresistance effect element. The electrode includes: a first non-magnetic layer being in contact with the switching element; and a second non-magnetic layer provided on a side opposite to a side on which the switching element is provided with respect to the first non-magnetic layer. The second non-magnetic layer has an amorphous structure and contains a metal oxide or a metal nitride.
