18671431. TWO-TERMINAL MEMORY DEVICE simplified abstract (HYUNDAI MOTOR COMPANY)
Contents
TWO-TERMINAL MEMORY DEVICE
Organization Name
Inventor(s)
Jong-Seok Lee of Suwon-si (KR)
Sang-Hyeok Yang of Suwon-si (KR)
TWO-TERMINAL MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18671431 titled 'TWO-TERMINAL MEMORY DEVICE
Simplified Explanation:
The patent application describes a two-terminal memory device with a unique structure involving a substrate, an extended drain, a ferroelectric layer, and a source.
- The device includes a substrate as its base.
- An extended drain extends from a drain and is laminated on the substrate.
- A ferroelectric layer is connected to the drain, covering the extended drain and the substrate.
- A source is laminated on the ferroelectric layer to face the drain.
Key Features and Innovation:
- Unique two-terminal memory device structure.
- Integration of ferroelectric layer for memory functionality.
- Simplified design for efficient memory storage.
Potential Applications:
The technology can be applied in:
- Memory storage devices.
- Data storage systems.
- Electronic devices requiring non-volatile memory.
Problems Solved:
- Enhanced memory storage capacity.
- Improved data retention.
- Simplified memory device design.
Benefits:
- Increased memory efficiency.
- Enhanced data security.
- Cost-effective memory solutions.
Commercial Applications:
Title: Innovative Two-Terminal Memory Device for Enhanced Data Storage This technology can be utilized in:
- Consumer electronics.
- Information technology.
- Data centers.
Questions about Two-Terminal Memory Device:
1. What are the potential advantages of using a ferroelectric layer in a memory device? 2. How does the two-terminal design of this memory device improve efficiency and performance?
Original Abstract Submitted
A two-terminal memory device includes: a substrate; an extended drain extending from a drain and a lower surface of the drain and laminated on the substrate; a ferroelectric layer connected to the drain and covering the extended drain and the substrate; and a source laminated on the ferroelectric layer to face the drain.
