18677609. PRE-DECODER CIRCUITRY simplified abstract (Micron Technology, Inc.)
Contents
PRE-DECODER CIRCUITRY
Organization Name
Inventor(s)
Byung S. Moon of Plano TX (US)
Ramachandra Rao Jogu of McKinney TX (US)
PRE-DECODER CIRCUITRY - A simplified explanation of the abstract
This abstract first appeared for US patent application 18677609 titled 'PRE-DECODER CIRCUITRY
The present disclosure pertains to pre-decoder circuitry in memory arrays, specifically involving a bias condition for selection signals to memory cells.
- Memory array with multiple memory cells
- Decoder circuitry with n-type transistors
- Pre-decoder circuitry providing bias conditions for selection signals
- Positive and negative voltages for different memory cell configurations
- First gate with positive voltage, second gate with negative voltage for positive configuration
- First gate with zero volts, second gate with negative voltage for negative configuration
Potential Applications: - Memory storage devices - Computer systems - Integrated circuits
Problems Solved: - Efficient selection of memory cells - Improved performance of memory arrays
Benefits: - Enhanced memory access speed - Reduced power consumption - Increased reliability of memory operations
Commercial Applications: Title: Advanced Memory Systems for High-Performance Computing This technology can be utilized in high-performance computing systems, data centers, and other applications requiring fast and reliable memory access.
Prior Art: Researchers can explore prior patents related to memory array design, decoder circuitry, and pre-decoder circuitry to understand the evolution of this technology.
Frequently Updated Research: Researchers are constantly working on optimizing pre-decoder circuitry for memory arrays to enhance overall system performance and efficiency.
Questions about Pre-Decoder Circuitry: 1. How does pre-decoder circuitry improve memory access speed? Pre-decoder circuitry optimizes the selection signals to memory cells, reducing latency and improving overall memory access speed.
2. What are the key differences between positive and negative configurations in memory cells? Positive configuration utilizes a positive voltage for the first gate and negative voltage for the second gate, while negative configuration uses zero volts for the first gate and negative voltage for the second gate.
Original Abstract Submitted
The present disclosure includes apparatuses, methods, and systems for pre-decoder circuitry. An embodiment includes a memory array including a plurality of memory cells, decoder circuitry coupled to the memory array, wherein the decoder circuitry comprises a first n-type transistor having a first gate and a second n-type transistor having a second gate, and pre-decoder circuitry configured to provide a bias condition for the first gate and second gate to provide a selection signal to one of the plurality of memory cells, wherein the bias condition comprises: a positive voltage for the first gate and a negative voltage for the second gate for a positive configuration for the memory cells, and zero volts for the first gate and the negative voltage for the second gate for a negative configuration for the memory cells.
