18606182. MAGNETIC MEMORY DEVICE simplified abstract (Kioxia Corporation)
Contents
MAGNETIC MEMORY DEVICE
Organization Name
Inventor(s)
Kenichi Yoshino of Seongnam-si Gyeonggi-do (KR)
MAGNETIC MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18606182 titled 'MAGNETIC MEMORY DEVICE
The magnetic memory device described in the patent application includes a lower structure with a bottom electrode made of a conductive material, a top electrode above the bottom electrode, a magnetoresistance effect element between the two electrodes, and an oxide insulating layer made of an oxide of the conductive material.
- The device consists of a unique oxide insulating layer that includes a first portion on the side surface of the bottom electrode and a second portion on the side surface of the magnetoresistance effect element.
- The bottom electrode and the magnetoresistance effect element are separated and protected by the oxide insulating layer, enhancing the device's performance and durability.
- The use of the oxide insulating layer made of the conductive material's oxide ensures efficient insulation and prevents interference between the different components of the device.
- This innovative design allows for improved functionality and reliability of the magnetic memory device, making it a valuable advancement in the field of magnetic storage technology.
- The patent application showcases a novel approach to constructing magnetic memory devices, offering a promising solution for enhancing data storage capabilities.
Potential Applications
The technology described in the patent application could be applied in various electronic devices requiring magnetic memory storage, such as computers, smartphones, and other digital devices.
Problems Solved
This technology addresses issues related to insulation and interference between components in magnetic memory devices, improving their overall performance and longevity.
Benefits
The benefits of this technology include enhanced functionality, increased reliability, and improved data storage capabilities in electronic devices.
Commercial Applications
The magnetic memory device with the unique oxide insulating layer could have significant commercial applications in the electronics industry, particularly in the development of more efficient and reliable storage solutions for various devices.
Questions about Magnetic Memory Devices
1. How does the oxide insulating layer improve the performance of the magnetic memory device? 2. What potential impact could this technology have on the future of data storage solutions?
Original Abstract Submitted
According to one embodiment, a magnetic memory device includes a lower structure, a bottom electrode provided on the lower structure and formed of a conductive material, a top electrode provided above the bottom electrode, a magnetoresistance effect element provided between the bottom electrode and the top electrode, and an oxide insulating layer including a first portion provided on a side surface of the bottom electrode and a second portion provided on a side surface of the magnetoresistance effect element, and formed of an oxide of the conductive material.
