18605999. MEMORY DEVICE simplified abstract (Kioxia Corporation)
Contents
MEMORY DEVICE
Organization Name
Inventor(s)
Toshihiko Nagase of Seoul (KR)
Kenichi Yoshino of Seongnam-si Gyeonggi-do (KR)
MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18605999 titled 'MEMORY DEVICE
The memory device described in the abstract includes a unique configuration of wiring lines and memory cells.
- First wiring line extends along a first direction.
- Second wiring line is provided on an upper layer side of the first wiring line and extends along a second direction intersecting the first direction.
- Memory cell is provided between the first wiring line and the second wiring line, containing a magnetoresistance effect element, a switching element, a middle electrode, and a resistive layer.
Key Features and Innovation:
- Memory cell structure with magnetoresistance effect element and switching element.
- Middle electrode positioned between the magnetoresistance effect element and the switching element.
- Resistive layer with higher resistance than the middle electrode.
Potential Applications:
- Data storage in electronic devices.
- Non-volatile memory applications.
- High-speed data processing.
Problems Solved:
- Enhanced memory cell performance.
- Improved data storage efficiency.
- Increased resistance levels for better data retention.
Benefits:
- Faster data access.
- Higher data storage capacity.
- Improved reliability of memory devices.
Commercial Applications:
- Memory chips for computers and smartphones.
- Data storage devices for servers and data centers.
- Embedded memory in IoT devices.
Questions about Memory Device Technology: 1. How does the resistive layer impact the performance of the memory cell? 2. What are the advantages of using a magnetoresistance effect element in memory devices?
Frequently Updated Research: Ongoing studies focus on optimizing the resistive layer composition for better memory cell performance and durability.
Original Abstract Submitted
According to one embodiment, a memory device includes a first wiring line extending along a first direction, a second wiring line provided on an upper layer side of the first wiring line and extending along a second direction intersecting the first direction, and a memory cell provided between the first wiring line and the second wiring line, and including a magnetoresistance effect element, a switching element, a middle electrode provided between the magnetoresistance effect element and the switching element, and a resistive layer provided between the magnetoresistance effect element and the second wiring line. A resistance of the resistive layer is higher than a resistance of the middle electrode.
