18591886. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Shoichi Miyazaki of Yokkaichi Mie (JP)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18591886 titled 'SEMICONDUCTOR MEMORY DEVICE
The memory device described in the patent application consists of a stacked body with electrode layers and insulating layers, columnar bodies extending through the stacked body, and a contact connected to a first electrode layer passing through one or more second electrode layers. The first electrode layer has a first surface and a second surface, with the first surface further away from the second electrode layers than the second surface. The contact includes a first insulating film, a second insulating film, and a metal film. The first end portion of the first insulating film protrudes into the first electrode layer through the second surface, while the second end portion of the second insulating film is in contact with a portion of the second surface. The distance between the first end portion and the first surface is shorter than the distance between the second end portion and the first surface.
- Stacked body with electrode and insulating layers
- Columnar bodies extending through the stacked body
- Contact connected to a first electrode layer passing through second electrode layers
- First electrode layer with first and second surfaces
- Contact includes first insulating film, second insulating film, and metal film
- Distances between end portions of insulating films and surfaces are different
Potential Applications: - Memory storage devices - Semiconductor industry - Electronics manufacturing
Problems Solved: - Efficient memory storage - Improved electrical connectivity - Enhanced device performance
Benefits: - Higher data storage capacity - Faster data access speeds - Increased device reliability
Commercial Applications: Title: Advanced Memory Devices for Enhanced Data Storage This technology can be utilized in the production of high-performance memory devices for various electronic applications, including smartphones, computers, and data centers. The innovation offers improved data storage capabilities and faster access speeds, making it a valuable asset in the semiconductor industry.
Prior Art: Readers can explore prior research on memory device structures, electrode configurations, and insulating film materials to gain a deeper understanding of the technological advancements in this field.
Frequently Updated Research: Stay informed about the latest developments in memory device technology, electrode materials, and semiconductor innovations to keep up with the rapidly evolving industry trends.
Questions about Memory Device Technology: 1. How does the configuration of electrode layers impact the performance of memory devices? - The arrangement of electrode layers can affect the electrical conductivity and data storage capacity of memory devices. 2. What are the potential challenges in scaling up this technology for mass production? - Scaling up production may involve optimizing manufacturing processes, ensuring consistency in device performance, and addressing cost-effectiveness concerns.
Original Abstract Submitted
A memory device includes a stacked body including electrode layers and insulating layers; columnar bodies extending through the stacked body; and a contact coupled to a first electrode layer and passing through one or more second electrode layers, the first electrode layer including a first surface and a second surface, the first surface disposed farther away from the second electrode layers than the second surface. The contact includes a first insulating film, a second insulating film, and a metal film. A first end portion of the first insulating film protrudes into the first electrode layer through the second surface. A second end portion of the second insulating film is in contact with a portion of the second surface. A distance t between the first end portion and the first surface is shorter than a distance t between the second end portion and the first surface.
