18599802. MEMORY DEVICE simplified abstract (Kioxia Corporation)
Contents
MEMORY DEVICE
Organization Name
Inventor(s)
Genki Kawaguchi of Yokkaichi (JP)
MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18599802 titled 'MEMORY DEVICE
The memory device described in the abstract includes a substrate, first conductive layers, an insulating layer, pillars, and contacts. The first conductive layers are above the substrate, with the insulating layer above them. The pillars function as memory cells and have portions facing the first conductive layers. The contacts are connected to the first conductive layers, each penetrating the insulating layer and connected to a terrace portion of one of the first conductive layers.
- The memory device includes first conductive layers, insulating layer, pillars, and contacts.
- Pillars function as memory cells and have portions facing the first conductive layers.
- Contacts are connected to the first conductive layers and penetrate the insulating layer.
- Each first conductive layer has a terrace portion not overlapping with another first conductive layer.
- Contacts are connected to the terrace portion of one first conductive layer among the first conductive layers.
Potential Applications: - This technology can be used in various memory storage devices. - It can be applied in computer systems, mobile devices, and other electronic devices requiring memory storage.
Problems Solved: - Provides a compact and efficient memory storage solution. - Enhances the performance and reliability of memory devices.
Benefits: - Increased memory storage capacity. - Improved data access speeds. - Enhanced overall performance of electronic devices.
Commercial Applications: Title: Innovative Memory Device Technology for Enhanced Data Storage This technology can be utilized in the development of next-generation memory storage devices for consumer electronics, data centers, and other applications requiring high-performance memory solutions.
Questions about Memory Device Technology: 1. How does this memory device technology compare to traditional memory storage solutions? 2. What are the potential scalability options for this technology in future memory devices?
Frequently Updated Research: Stay updated on the latest advancements in memory device technology to ensure optimal performance and compatibility with evolving electronic systems.
Original Abstract Submitted
A memory device according to an embodiment includes a substrate, first conductive layers, an insulating layer, pillars, and contacts. The first conductive layers are provided above the substrate. The insulating layer is provided above the first conductive layers. The pillars have portions facing the first conductive layers functioning as memory cells. The contacts are connected to the first conductive layers, respectively. Each of the first conductive layers has, between itself and the substrate, a terrace portion not overlapping with another first conductive layer. Each of the contacts penetrates the insulating layer and is, in a bottom portion thereof, connected to the terrace portion of one first conductive layer among the first conductive layers.
