18595336. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)

SEMICONDUCTOR MEMORY DEVICE

Organization Name

Kioxia Corporation

Inventor(s)

Takashi Kurusu of Yokkaichi Mie (JP)

Koji Shirai of Yokohama Kanagawa (JP)

SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18595336 titled 'SEMICONDUCTOR MEMORY DEVICE

The semiconductor memory device described in the patent application consists of a stacked body with alternating conductive and insulating layers, a columnar body within the stacked body extending in a first direction, and a source line layer.

• The columnar body includes a core insulating layer, a semiconductor layer surrounding the core insulating layer, and a memory layer surrounding the semiconductor layer.
• A portion of the source line layer extends in the first direction within the stacked body, with a side surface in contact with the semiconductor layer and an end face in contact with the core insulating layer.
• The source line layer includes a pointed portion on the end face at an interface of the portion, the core insulating layer, and the semiconductor layer.
• The end face and the side surface of the semiconductor layer form an acute angle at the pointed portion.

• • Key Features and Innovation:**

• Stacked body with alternating conductive and insulating layers
• Columnar body with core insulating layer, semiconductor layer, and memory layer
• Source line layer extending within the stacked body
• Pointed portion on the end face of the source line layer

• • Potential Applications:**

This technology could be applied in various semiconductor memory devices, improving their performance and efficiency.

• • Problems Solved:**

This innovation addresses the need for more advanced and compact semiconductor memory devices with improved functionality.

• • Benefits:**

• Enhanced performance and efficiency in semiconductor memory devices
• Compact design with improved functionality
• Potential for increased data storage capacity

• • Commercial Applications:**

This technology could have significant commercial applications in the semiconductor industry, particularly in the development of advanced memory devices for various electronic devices.

• • Questions about the Technology:**

1. How does the pointed portion on the end face of the source line layer contribute to the overall functionality of the semiconductor memory device? 2. What are the potential challenges in implementing this technology in mass production of semiconductor memory devices?

Original Abstract Submitted

A semiconductor memory device includes a stacked body in which conductive layers and insulating layers are alternately stacked in a first direction, a columnar body in the stacked body and extending in the first direction, and a source line layer. The columnar body includes a core insulating layer, a semiconductor layer surrounding the core insulating layer, and a memory layer surrounding the semiconductor layer. A portion of the source line layer extends in the first direction to be provided in the stacked body, has a side surface in contact with the semiconductor layer and an end face in contact with the core insulating layer, and includes a pointed portion on the end face at an interface of the portion, the core insulating layer, and the semiconductor layer, wherein the end face and the side surface of the semiconductor layer form an acute angle at the pointed portion.