18599848. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Yoshikazu Harada of Kawasaki (JP)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18599848 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation: The patent application describes a semiconductor memory device that includes a memory cell with a transistor, an interconnect, and a first circuit. The first circuit is responsible for performing an erase operation, which involves applying an erase voltage between the gate and channel of the transistor via the interconnect, as well as verifying the threshold voltage of the memory cell. The first circuit can suspend the erase operation upon receiving a command and resume it based on the voltage value of the interconnect.
- The semiconductor memory device includes a memory cell with a transistor, an interconnect, and a first circuit.
- The first circuit performs an erase operation, applying an erase voltage and verifying the threshold voltage of the memory cell.
- The first circuit can suspend the erase operation upon receiving a command and resume it based on the voltage value of the interconnect.
Potential Applications: 1. Semiconductor manufacturing industry for memory devices. 2. Data storage devices in electronic devices such as smartphones, laptops, and tablets.
Problems Solved: 1. Efficient erase operations in semiconductor memory devices. 2. Improved control over erase processes in memory cells.
Benefits: 1. Enhanced performance and reliability of semiconductor memory devices. 2. Increased efficiency in data storage and retrieval processes.
Commercial Applications: The technology can be utilized in the production of high-performance memory devices for consumer electronics, data centers, and other digital storage applications. This innovation could lead to faster and more reliable data storage solutions in various industries.
Prior Art: Readers interested in prior art related to this technology can explore patents and research papers in the field of semiconductor memory devices, specifically focusing on erase operations and memory cell control mechanisms.
Frequently Updated Research: Researchers in the field of semiconductor memory devices may be conducting studies on optimizing erase operations, improving memory cell performance, and enhancing data storage capabilities. Stay updated on the latest advancements in this area for potential future developments.
Questions about Semiconductor Memory Devices: 1. How does the erase operation in semiconductor memory devices impact overall performance? 2. What are the key factors influencing the efficiency of erase processes in memory cells?
Original Abstract Submitted
According to one embodiment, a semiconductor memory device includes a memory cell including a transistor, an interconnect, and a first circuit. The first circuit performs an erase operation including an erase voltage applying operation of applying an erase voltage between a gate of the transistor and a channel of the transistor via the interconnect, and an erase verify operation of determining a threshold voltage of the memory cell. The first circuit performs a first suspension processing of suspending the erase operation upon receiving a first command during the erase operation. The first circuit performs the erase voltage applying operation or the erase verify operation at the time of resuming the erase operation suspended by the first suspension processing, based on a voltage value of the interconnect at the time of receiving the first command.
