18459172. SEMICONDUCTOR DEVICE simplified abstract (Kabushiki Kaisha Toshiba)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Shunsuke Asaba of Himeji Hyogo (JP)
Hiroshi Kono of Himeji Hyogo (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18459172 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of a silicon carbide layer with different conductivity regions and gate electrodes.
- The device includes first, second, third, and fourth silicon carbide regions of varying conductivity types.
- Two gate electrodes are present on the first surface of the silicon carbide layer, extending in a specific direction.
- A first electrode on the first surface connects to the third and fourth silicon carbide regions and the first silicon carbide region.
- A second electrode is located on the second surface of the silicon carbide layer.
- The depth of the second silicon carbide region facing the fourth silicon carbide region is shallower than the depth facing the first gate electrode.
Potential Applications: - Power electronics - High-temperature applications - Electric vehicles - Renewable energy systems
Problems Solved: - Improved efficiency in power electronics - Enhanced performance in high-temperature environments - Increased reliability in electric vehicle components
Benefits: - Higher efficiency - Better thermal management - Increased durability - Enhanced overall performance
Commercial Applications: Title: "Advanced Silicon Carbide Semiconductor Devices for Power Electronics" This technology can be utilized in industries such as electric vehicles, renewable energy systems, and power distribution, leading to more efficient and reliable electronic components.
Questions about the technology: 1. How does the depth variation of the silicon carbide regions impact the device's performance? 2. What are the specific advantages of using silicon carbide in semiconductor devices compared to other materials?
Original Abstract Submitted
A semiconductor device includes a silicon carbide layer having a first silicon carbide region of a first conductivity type, a second silicon carbide region of a second conductivity type, a third silicon carbide region of the second conductivity type, and a fourth silicon carbide region of the first conductivity type, first and second gate electrodes extending in a first direction and provided on a first surface of the silicon carbide layer, a first electrode on the first surface and including a first portion in contact with the third and fourth silicon carbide regions and a second portion in contact with the first silicon carbide region, and a second electrode on a second surface of the silicon carbide layer. The depth of the second silicon carbide region facing the fourth silicon carbide region is shallower than the depth of the second silicon carbide region facing the first gate electrode.
