18364860. SEMICONDUCTOR DEVICE simplified abstract (Kabushiki Kaisha Toshiba)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Shunsuke Asaba of Himeji Hyogo (JP)
Hiroshi Kono of Himeji Hyogo (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18364860 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of a silicon carbide layer with multiple regions and gate electrodes, as well as first and second electrodes with specific contact faces.
- Silicon carbide layer with first and second faces
- First and second gate electrodes
- Multiple silicon carbide regions including first, second, third, and fourth regions
- First electrode with specific contact faces in contact with different silicon carbide regions
Potential Applications: - Power electronics - High-temperature applications - Electric vehicles - Renewable energy systems
Problems Solved: - Improved efficiency in power electronics - Enhanced performance in high-temperature environments - Increased reliability in electric vehicle components
Benefits: - Higher power density - Better thermal conductivity - Increased durability and longevity
Commercial Applications: Title: Advanced Silicon Carbide Semiconductor Devices for Power Electronics This technology can be utilized in the development of more efficient power electronics for various industries, including automotive, aerospace, and renewable energy sectors. The market implications include improved energy efficiency, reduced maintenance costs, and enhanced overall performance.
Questions about the technology: 1. How does the use of silicon carbide in semiconductor devices improve efficiency? 2. What are the specific advantages of utilizing multiple silicon carbide regions in the device design?
Frequently Updated Research: Researchers are continually exploring ways to enhance the performance and reliability of silicon carbide semiconductor devices, focusing on optimizing the design and materials used in their construction. Stay updated on the latest advancements in this field to leverage the full potential of this technology.
Original Abstract Submitted
A semiconductor device according to an embodiment includes: a silicon carbide layer having a first face and a second face; first and second gate electrodes; a first silicon carbide region; a second silicon carbide region between the first silicon carbide region and the first face; a third silicon carbide region between the second silicon carbide region and the first face; a fourth silicon carbide region between the third silicon carbide region and the first face; a first electrode; and a second electrode. The first electrode includes a first portion, and the first portion includes a first contact face in contact with the fourth silicon carbide region, a second contact face in contact with the fourth silicon carbide region, a third contact face in contact with the fourth silicon carbide region and the third silicon carbide region, and a fourth contact face in contact with the third silicon carbide region.
