18463231. CAPACITOR simplified abstract (Kabushiki Kaisha Toshiba)
Contents
CAPACITOR
Organization Name
Inventor(s)
Tatsuya Ohguro of Kanazawa Ishikawa (JP)
CAPACITOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18463231 titled 'CAPACITOR
The abstract describes a capacitor with a semiconductor substrate, an electrode layer containing metal silicide, a dielectric film, and terminals connected to the electrode layer and substrate.
- The capacitor includes a semiconductor substrate with an electrode layer containing metal silicide.
- A dielectric film insulates the electrode layer from the semiconductor substrate.
- Terminals are connected to the electrode layer and semiconductor substrate.
- The innovation lies in the design and composition of the capacitor for efficient electrical insulation and connectivity.
Potential Applications:
- Integrated circuits
- Electronic devices
- Power storage systems
Problems Solved:
- Efficient electrical insulation
- Enhanced connectivity
- Improved capacitor performance
Benefits:
- Increased efficiency
- Better electrical conductivity
- Enhanced overall performance
Commercial Applications:
- Semiconductor industry
- Electronics manufacturing
- Energy storage sector
Questions about Capacitors: 1. How does the composition of the electrode layer impact the performance of the capacitor?
- The composition of the electrode layer affects the conductivity and efficiency of the capacitor.
2. What are the potential challenges in integrating this capacitor design into existing electronic devices?
- The challenges may include compatibility issues and manufacturing processes.
Original Abstract Submitted
According to one embodiment, a capacitor includes a semiconductor substrate, an electrode layer extending from a surface of the semiconductor substrate into the semiconductor substrate and containing a metal silicide in the semiconductor substrate, a dielectric film provided between the electrode layer and the semiconductor substrate and electrically insulating the electrode layer from the semiconductor substrate, a first terminal connected to the electrode layer, and a second terminal connected to the semiconductor substrate.
