18463138. SEMICONDUCTOR DEVICE simplified abstract (Kabushiki Kaisha Toshiba)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kazutoshi Nakamura of Nonoichi Ishikawa (JP)
Shunta Murai of Kanazawa Ishikawa (JP)
Daiki Yoshikawa of Kanazawa Ishikawa (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18463138 titled 'SEMICONDUCTOR DEVICE
According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a first region, and a second region. The second electrode is separated from the first electrode. The first region includes various semiconductor regions and a gate electrode.
- The device has a complex structure with multiple semiconductor regions of different conductivity types.
- The fifth semiconductor region has a higher impurity concentration than the third semiconductor region.
- The sixth semiconductor region has a higher impurity concentration than the third semiconductor region.
- The gate electrode plays a crucial role in controlling the flow of current in the device.
- The device is designed to optimize performance and efficiency in semiconductor applications.
Potential Applications: - This technology can be used in power electronics for efficient energy conversion. - It can be applied in high-frequency communication systems for signal processing. - The device may find use in sensor applications for accurate data collection.
Problems Solved: - Enhances the performance and efficiency of semiconductor devices. - Provides better control over current flow in electronic circuits. - Optimizes the design of semiconductor components for various applications.
Benefits: - Improved functionality and performance in semiconductor devices. - Enhanced control over current flow for better circuit operation. - Increased efficiency and reliability in electronic systems.
Commercial Applications: Title: Advanced Semiconductor Device for Enhanced Performance in Power Electronics This technology can be commercialized in the power electronics industry for more efficient energy conversion, leading to cost savings and improved performance. It can also be utilized in high-frequency communication systems and sensor applications, expanding its market reach and potential impact.
Questions about Semiconductor Device: 1. How does the impurity concentration in different semiconductor regions affect the performance of the device? The impurity concentration in the semiconductor regions influences the conductivity and overall behavior of the device, impacting its efficiency and functionality.
2. What role does the gate electrode play in controlling the flow of current in the semiconductor device? The gate electrode acts as a control element, regulating the flow of current between different semiconductor regions and enabling precise operation of the device.
Original Abstract Submitted
According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a first region, and a second region. The second electrode is separated from the first electrode. The first region includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a gate electrode, a fourth semiconductor region of the second conductivity type, a fifth semiconductor region of the first conductivity type, and a sixth semiconductor region of the first conductivity type. The fifth semiconductor region, located between the fourth semiconductor region and a portion of the third semiconductor region, has a higher first-conductivity-type impurity concentration than the third semiconductor region. The sixth semiconductor region, located between the third semiconductor region and the portion of the second electrode, has a higher first-conductivity-type impurity concentration than the third semiconductor region.
