18602274. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Byeonghee Son of Suwon-si (KR)
Myunggil Kang of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18602274 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes an active region, a nanosheet stack, gate structures with gate electrodes, source/drain regions, and a device isolation layer.
- The active region extends in a first horizontal direction.
- The nanosheet stack is separate from the active region.
- The gate structures extend in a second horizontal direction and contain gate electrodes.
- Source/drain regions are located on the sidewalls of the gate structures.
- A device isolation layer extends in a vertical direction.
- The gate structures consist of a first gate structure with a source/drain region on one sidewall and the device isolation layer on the other sidewall, and a second gate structure with source/drain regions on both sidewalls.
- The gate electrodes of the first gate structure include a main gate electrode and multiple sub-gate electrodes, with an internal spacer between the device isolation layer and the sub-gate electrodes.
Potential Applications: - This technology can be used in the development of advanced semiconductor devices for various electronic applications. - It could enhance the performance and efficiency of integrated circuits in electronic devices.
Problems Solved: - The technology addresses the need for improved semiconductor device structures with enhanced functionality and performance. - It provides a solution for optimizing the design and operation of semiconductor devices.
Benefits: - Improved performance and efficiency of semiconductor devices. - Enhanced functionality and capabilities for electronic applications. - Potential for miniaturization and increased integration in electronic devices.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Electronic Applications This technology has potential commercial applications in the semiconductor industry for the development of high-performance electronic devices. It could be utilized in the production of advanced integrated circuits for various electronic applications, leading to improved functionality and efficiency in electronic devices.
Questions about Semiconductor Device Technology: 1. How does the placement of source/drain regions on the gate structures impact the performance of the semiconductor device? 2. What are the advantages of using a nanosheet stack in conjunction with the active region in semiconductor devices?
Original Abstract Submitted
A semiconductor device including an active region extending in a first horizontal direction, a nanosheet stack apart from the active region, a plurality of gate structures extending in a second horizontal direction and including a plurality of gate electrodes, a plurality of source/drain regions arranged on sidewalls of the gate structures, and a device isolation layer extending in a vertical direction, wherein the plurality of gate structures include a first gate structure in which a source/drain region is arranged on one sidewall and the device isolation layer is arranged on the other sidewall, and a second gate structure in which source/drain regions are arranged on both sidewalls, wherein the plurality of gate electrodes of the first gate structure include a main gate electrode positioned at the uppermost end and a plurality of sub-gate electrodes, and an internal spacer is between the device isolation layer and the plurality of sub-gate electrodes.
