18397561. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

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SEMICONDUCTOR DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Gunho Jo of Suwon-si (KR)

Heesub Kim of Suwon-si (KR)

Seunghyun Lim of Suwon-si (KR)

Bomi Kim of Suwon-si (KR)

Eunho Cho of Suwon-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18397561 titled 'SEMICONDUCTOR DEVICE

The semiconductor device described in the abstract includes a complex structure with multiple layers and patterns, such as gate structures, capping patterns, and spacers, all designed to enhance the device's performance.

  • The device features an active pattern with sheet patterns spaced apart from a lower pattern, along with a gate structure that surrounds these patterns.
  • Gate capping patterns and spacers are also included in the design to provide additional support and functionality.
  • The innovative design of this semiconductor device aims to improve efficiency and performance in electronic applications.
  • By incorporating multiple layers and patterns, the device can achieve higher levels of functionality and reliability.
  • The intricate structure of the device allows for precise control and manipulation of electrical signals, making it suitable for a wide range of applications in the semiconductor industry.

Potential Applications: This technology can be applied in various electronic devices, such as smartphones, computers, and other consumer electronics, to enhance their performance and efficiency.

Problems Solved: The semiconductor device addresses the need for improved functionality and reliability in electronic applications by incorporating advanced design features.

Benefits: The device offers enhanced performance, efficiency, and reliability compared to traditional semiconductor devices, making it a valuable innovation in the industry.

Commercial Applications: This technology has significant commercial potential in the semiconductor industry, where high-performance devices are in demand for various electronic applications.

Questions about the technology: 1. How does the complex structure of the semiconductor device contribute to its overall performance and functionality? 2. What specific advantages does the innovative design of this device offer compared to traditional semiconductor devices?


Original Abstract Submitted

A semiconductor device includes a substrate, an active pattern including a lower pattern extending in a first direction and a plurality of sheet patterns above an upper surface of the lower pattern and spaced apart from the lower pattern in a second direction substantially perpendicular to the first direction, a gate structure on the lower pattern and including a gate electrode and a gate insulating film, the gate electrode and the gate insulating film at least partially surrounding the plurality of sheet patterns, a first gate capping pattern on the gate structure and above the plurality of sheet patterns in the second direction, a gate spacer extending along a side wall of the gate structure, and a second gate capping pattern extending along an upper surface of the gate structure and an upper surface of the first gate capping pattern.