18591310. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Changhwa Jung of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18591310 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of a lower electrode on a substrate, a dielectric layer covering the lower electrode, and an upper electrode spaced apart from the lower electrode. The dielectric layer is positioned between the upper and lower electrodes, with a thickness not exceeding 6 nm and a grain size ranging from 3 nm to 30 nm.
- Lower electrode on a substrate
- Dielectric layer with a thickness of 6 nm or less
- Upper electrode spaced apart from the lower electrode
- Grain size in the dielectric layer between 3 nm and 30 nm
Potential Applications: - Advanced electronic devices - Nanotechnology - Semiconductor industry
Problems Solved: - Enhancing performance of semiconductor devices - Improving efficiency of electronic components
Benefits: - Increased functionality - Enhanced electrical properties - Potential for miniaturization
Commercial Applications: Title: Advanced Semiconductor Devices for Next-Generation Electronics This technology can be utilized in the development of cutting-edge electronic devices, leading to advancements in various industries such as telecommunications, computing, and consumer electronics. The market implications include improved product performance, increased efficiency, and potential cost savings for manufacturers.
Questions about Semiconductor Devices: 1. How does the thickness of the dielectric layer impact the performance of the semiconductor device? The thickness of the dielectric layer plays a crucial role in determining the capacitance and overall efficiency of the device. A thinner dielectric layer can lead to improved electrical properties and enhanced performance.
2. What are the potential challenges in manufacturing semiconductor devices with such precise grain sizes in the dielectric layer? Manufacturing semiconductor devices with specific grain sizes in the dielectric layer may require advanced fabrication techniques and precise control over the deposition process. Ensuring uniformity and consistency in grain size distribution can be a key challenge in production.
Original Abstract Submitted
A semiconductor device includes a lower electrode disposed on a substrate; a dielectric layer covering the lower electrode; and an upper electrode spaced apart from the lower electrode. The dielectric layer is disposed between the upper electrode and the lower electrode. A thickness of the dielectric layer is less than or equal to 6 nm, and a grain size in the dielectric layer is between 3 nm and 30 nm.
